Memory Fundamentals For Engineers

By The SE Staff - 17 Sep, 2024 - Comments: 0

Memory is one of a very few elite electronic components essential to any electronic system. Modern electronics perform extraordinarily complex duties that would be impossible without memory. Your computer obviously contains memory, but so does your car, your smartphone, your doorbell camera, your entertainment system, and any other gadget benefiting from digital electronics. This eBook prov... » read more

Impact of Scaling and BEOL Technology Solutions At The 7nm Node On MRAM

By Technical Paper Link - 20 Feb, 2024 - Comments: 0

A technical paper titled “Impact of Technology Scaling and Back-End-of-the-Line Technology Solutions on Magnetic Random-Access Memories” was published by researchers at Georgia Institute of Technology. Abstract: "While magnetic random-access memories (MRAMs) are promising because of their nonvolatility, relatively fast speeds, and high endurance, there are major challenges in adopting the... » read more

Radiation-Hardened Non-Volatile Magnetic Latch That Tolerates SNUs and DNUs

By Technical Paper Link - 13 Sep, 2022 - Comments: 0

A research paper titled "A Radiation-Hardened Non-Volatile Magnetic Latch with High Reliability and Persistent Storage" was published by researchers at Anhui University, Hefei University of Technology, LIRMM, and Kyutech. According to the abstract: "Based on an advanced triple-path dual-interlocked-storage-cell (TPDICE) and MTJs, this paper proposes a radiation-hardened non-volatile magneti... » read more

Tech Talk: Data-Driven Design

By Ed Sperling - 14 Jun, 2018 - Comments: 0

Steven Woo, distinguished inventor at Rambus, talks about memory hierarchies and how they are changing as the amount of data continues to grow. https://youtu.be/4FwZ1YeQa18 » read more

MRAM Begins To Attract Attention

By Mark LaPedus - 19 Sep, 2013 - Comments: 0

By Mark LaPedus In the 1980s, there were two separate innovations that changed the landscape in a pair of related fields—nonvolatile memory and storage. In one effort, Toshiba invented the flash memory, thereby leading to NAND and NOR devices. On another front, physicists discovered the giant magnetoresistance (GMR) effect, a technology that forms the basis of hard disk drives, magnetores... » read more

Universal Memories Fall Back To Earth

By Ed Sperling - 20 Sep, 2012 - Comments: 0

By Mark LaPedus Ten years ago, Intel Corp. declared that flash memory would stop scaling at 65nm, prompting the need for a new replacement technology. Thinking the end was near for flash, a number of companies began to develop various next-generation memory types, such as 3D chips, FeRAM, MRAM, phase-change memory (PCM), and ReRAM. Many of these technologies were originally billed as “uni... » read more

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Shift Left Is The Tip Of The Iceberg

A transformative change is underway for semiconductor design and EDA. New languages, models, and abstractions will need to be created.

by Brian Bailey