Suppressing Stochastic Interaction To Improve EUV Lithography


Authors Zhimin Zhu Sr., Joyce Lowes, Shawn Ye, Zhiqiang Fan, and Tim Limmer of Brewer Science, Inc. (United States) used Stochastic Area Thickness (SAT) and Dynamic Stochastic Area Thickness (DSAT) to evaluate the stochastic interactions. High optical foot exposure is proposed instead of conventional low substrate reflectivity to reduce SAT. Adhesion control by acid/quencher loading is proposed... » read more

Finding, Predicting EUV Stochastic Defects


Several vendors are rolling out next-generation inspection systems and software that locates problematic defects in chips caused by processes in extreme ultraviolet (EUV) lithography. Each defect detection technology involves various tradeoffs. But it’s imperative to use one or more of them in the fab. Ultimately, these so-called stochastic-induced defects caused by EUV can impact the perf... » read more

Spiking Neural Networks Place Data In Time


Artificial neural networks have found a variety of commercial applications, from facial recognition to recommendation engines. Compute-in-memory accelerators seek to improve the computational efficiency of these networks by helping to overcome the von Neumann bottleneck. But the success of artificial neural networks also highlights their inadequacies. They replicate only a small subset of th... » read more

Comparative Stochastic Process Variation Bands For N7, N5, And N3 At EUV


By Alessandro Vaglio Preta, Trey Gravesa, David Blankenshipa, Kunlun Baib, Stewart Robertsona, Peter De Bisschopc, John J. Biaforea a) KLA-Tencor Corporation, Austin, TX 78759, U.S.A. b) KLA-Tencor Corporation, Milpitas, CA 95035, U.S.A. c) IMEC, Kapeldreef 75, 3000, BE ABSTRACT Stochastics effects are the ultimate limiter of optical lithography technology and are a major concern for n... » read more