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Vertical MoS2 transistors with sub-1-nm gate lengths


Abstract "Ultra-scaled transistors are of interest in the development of next-generation electronic devices. Although atomically thin molybdenum disulfide (MoS2) transistors have been reported, the fabrication of devices with gate lengths below 1 nm has been challenging. Here we demonstrate side-wall MoS2 transistors with an atomically thin channel and a physical gate length of sub-1 nm ... » read more

Semiconductor nanochannels in metallic carbon nanotubes by thermomechanical chirality alteration


Abstract: "Carbon nanotubes have a helical structure wherein the chirality determines whether they are metallic or semiconducting. Using in situ transmission electron microscopy, we applied heating and mechanical strain to alter the local chirality and thereby control the electronic properties of individual single-wall carbon nanotubes. A transition trend toward a larger chiral angle region wa... » read more

High Electron Mobility in Strained GaAs Nanowires


Abstract: "Transistor concepts based on semiconductor nanowires promise high performance, lower energy consumption and better integrability in various platforms in nanoscale dimensions. Concerning the intrinsic transport properties of electrons in nanowires, relatively high mobility values that approach those in bulk crystals have been obtained only in core/shell heterostructures, where elec... » read more

A Ferroelectric Semiconductor Field-Effect Transistor


Abstract: "Ferroelectric field-effect transistors employ a ferroelectric material as a gate insulator, the polarization state of which can be detected using the channel conductance of the device. As a result, the devices are potentially of use in non-volatile memory technology, but they suffer from short retention times, which limits their wider application. Here, we report a ferroelectric sem... » read more

Where Technology Breakthroughs Are Needed


After years of delays, extreme ultraviolet (EUV) lithography is finally in production at the 7nm logic node with 5nm in the works. EUV, a next-generation lithography technology, certainly will help chipmakers migrate to the next nodes. But EUV doesn’t solve every problem. Nor does it address all challenges in the semiconductor industry. Not by a long shot. To be sure, the industry needs... » read more

Power/Performance Bits: June 18


Multi-value logic transistor Researchers at the University of Texas at Dallas, Hanyang University, Gwangju Institute of Science and Technology, Yonsei University, Kookmin University, and Ulsan National Institute of Science and Technology developed and fabricated a transistor capable of storing intermediate values between 0 and 1. Such a multi-value logic transistor would allow more operations ... » read more

Manufacturing Bits: July 8


Intel foundry deal At the Semicon West trade show in San Francisco, Intel announced that it has entered into a foundry agreement with Panasonic’s LSI Business Division. Intel's custom foundry business will manufacture future Panasonic system-on-chips (SoCs) using Intel's 14nm low-power manufacturing process. Intel’s low-power process will be a derivative of its general-purpose 14nm proc... » read more