Many Stresses Impact TSVs

By Ann Mutschler - 20 Feb, 2014 - Comments: 0

Too much stress in humans is typically not beneficial, and the same goes for 3D-ICs with through-silicon vias (TSVs). Stress effects here come from the fact that copper, which is the conductor of choice for the TSVs, and silicon have different coefficients of thermal expansion. “If you can imagine that a via will be etched through the silicon, copper will be deposited inside and then t... » read more

Heat Problems Grow With FinFETs, 3D-ICs

By Ann Mutschler - 13 Feb, 2014 - Comments: 2

From high-end consumer devices to rack-mounted arrays inside of data centers, thermal issues are becoming more serious—and getting much more attention. Driving this shift is the move from single chips to 3D ICs, whether they are interposer-based or stacked die. It’s a well-understood challenge: Die stacking can cause thermal issues because of the lack of a readily accessible thermal diss... » read more

Manufacturing Bits: Jan. 21

By Mark LaPedus - 21 Jan, 2014 - Comments: 1

Redefining The Kilogram In 2011, the General Conference on Weights and Measures approved a plan to redefine the kilogram and other measurement units. The new definition for the kilogram will be based on the fixed numerical values of Planck’s constant (h), according to the National Institute of Standards and Technology (NIST), part of the U.S. Department of Commerce. NIST has taken steps t... » read more

Momentum Builds For Monolithic 3D ICs

By Mark LaPedus - 14 Nov, 2013 - Comments: 1

The 2.5D/3D chip market is heating up on several fronts. On one front, stacked-die using through-silicon vias (TSVs) is taking root. In a separate area, Samsung is sampling the world’s first 3D NAND device, with Micron and SK Hynix expected to follow suit. And now, there is another technology generating steam—monolithic 3D integrated circuits. In stacked-die, bare die are connected using... » read more

Temporary Bonding, Debonding Remains Challenging For TSV Adoption

By Jeff Chappell - 28 Oct, 2013 - Comments: 0

By Jeff Chappell One issue with the adoption of TSVs in 3D ICs in mainstream semiconductor applications revolves around the throughput of the temporary wafer bonding and debonding process. This doesn't necessarily equate to a roadblock, but work certainly remains to be done on this and related issues. On one hand, TSVs already are being used in the manufacturing of compound semiconductors ... » read more

TSVs: Welcome To The Era Of Probably Good Die

By Jeff Chappell - 21 Oct, 2013 - Comments: 0

Among the challenges of a widespread adoption of 3D ICs is how to test them, particularly when it comes to through-silicon vias (TSVs). While not necessarily presenting a roadblock, TSVs use in the mainstream will almost certainly change traditional test strategies. In fact for many chipmakers looking to stack their silicon, they may come to rely less on the traditional known good die (KGD) ... » read more

The Upside Of Through-Silicon Vias

By Katherine Derbyshire - 17 Oct, 2013 - Comments: 0

Through-silicon vias (TSVs) for 3D integration are superficially similar to damascene copper interconnects for integrated circuits. Both etch the via, into either silicon or a dielectric, line it with a barrier against copper diffusion, then deposit a seed layer prior to filling the via with copper using some form of aqueous deposition. In both processes, the integrity of the diffusion barrier ... » read more

Manufacturing Bits: Oct. 1

By Mark LaPedus - 01 Oct, 2013 - Comments: 0

Nanoimprint Foundry Singapore’s A*STAR’s Institute of Materials Research and Engineering (IMRE) and its partners have launched a new R&D foundry using nanoimprint lithography. The so-called Nanoimprint Foundry is a collaboration between several entities, such as IMRE, Toshiba Machines, EV Group, NTT, NIL Technology, Kyodo International, Micro Resist Technology, Nanoveu and Solves In... » read more

Front End Comes To The Back End

By Jeff Chappell - 19 Sep, 2013 - Comments: 0

By Jeff Chappell For outsourced assembly and test (OSAT) houses either planning for or already offering through-silicon via (TSV) capability for their 3D packaging efforts, this has meant the front end is coming to the back end, in a manner of speaking. A bit of an exaggeration perhaps, as most generalizations are. But thanks to TSVs, in a very real sense some of what would typically be the... » read more

Memory Architectures Undergo Changes

By Ed Sperling - 22 Aug, 2013 - Comments: 0

By Ed Sperling Memory architectures are taking some new twists. Fueled by multi-core and multiple processors, as well as some speed bumps using existing technology, SoC makers are beginning to rethink how to architect, model and assemble memory to improve speed, lower power and reduce cost. What’s unusual about all of this is that it doesn’t rely on new technology, although there certai... » read more

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