Simulation Study Of Vertically Stacked 2D NSFETs


A new technical paper titled "Simulation of Vertically Stacked 2-D Nanosheet FETs" was published by researchers at Università di Pisa and TU Wien. Abstract "We present a simulation study of vertically stacked 2-D nanosheet field-effect transistors (NSFETs). The aim of this investigation is to assess the performance and potential of FinFET alternatives, i.e., gate-all-around (GAA) nanosheet... » read more

Chip Industry Week In Review


The new Trump administration was quick to put a different stamp on the tech world: President Trump rescinded a long list of Biden’s executive orders, including those aimed at AI safety and the mandate for 50% EVs by 2030. Roughly 1.3 million EVs were sold in the U.S. in 2024, up 7.3% from 2023. The new administration announced $500 billion ($100 billion initially) in private sector in... » read more

Schottky Barrier Transistors: Status, Challenges and Modeling Tools


A technical paper titled "Roadmap for Schottky barrier transistors" was published by researchers at University of Surrey, Namlab gGmbH, Forschungszentrum Jülich (FZJ), et al. Abstract "In this roadmap we consider the status and challenges of technologies that use the properties of a rectifying metal-semiconductor interface, known as a Schottky barrier (SB), as an asset for device functio... » read more

Chip Industry Technical Paper Roundup: Nov. 25


New technical papers recently added to Semiconductor Engineering’s library: [table id=386 /] » read more

Ge-Based Multigate SBFETs Operated In An NDR Mode (TU Wien, JKU)


A new technical paper titled "Implementation of Negative Differential Resistance-Based Circuits in Multigate Ge Transistors" was published by researchers at TU Wien and JKU (Johannes Kepler University). Abstract: "The co-integration of negative differential resistance (NDR) and Si-based CMOS technology might be a promising concept for multimode devices and circuits with enhanced performance... » read more

Research Bits: Oct. 8


Soft, flexible polymer semiconductors Stanford University materials scientists used a specialized electron microscope – cryo-electron microscopy (Cryo 4D-STEM) – to explore the microstructure of soft semiconductors that could lead to new-generation electronics. Organic mixed ionic-electronic conductors (OMIECs) are soft, flexible polymer semiconductors with promising electrochemical qua... » read more

Chip Industry Week In Review


The University of Texas at Austin’s Texas Institute for Electronics (TIE) was awarded $840 million to establish a Department of Defense microelectronics manufacturing center. This center will focus on developing advanced semiconductor microsystems to enhance U.S. defense systems. The project is part of DARPA's NGMM Program. The U.S. Dept. of Commerce announced preliminary terms with Global... » read more

Chip Industry Week In Review


Rapidus and IBM are jointly developing mass production capabilities for chiplet-based advanced packages. The collaboration builds on an existing agreement to develop 2nm process technology. Vanguard and NXP will jointly establish VisionPower Semiconductor Manufacturing Company (VSMC) in Singapore to build a $7.8 billion, 12-inch wafer plant. This is part of a global supply chain shift “Out... » read more

Chip Industry Week In Review


By Adam Kovac, Karen Heyman, and Liz Allan.  China introduced strict procurement guidelines aimed at blocking the use of AMD and Intel processors in government computers. Meanwhile, China urged the Netherlands to ease restrictions on deep ultraviolet (DUV) litho equipment, according to Nikkei Asia. DUV is an older technology, based on 193nm ArF lasers, but in conjunction with multi-p... » read more

Chip Industry Technical Paper Roundup: Jan 2


New technical papers added to Semiconductor Engineering’s library this week. [table id=180 /] More ReadingTechnical Paper Library home » read more

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