Warpage in wafer-level packaging; NVM tutorial; GAAFETs; uncore frequency scaling for heterogeneous systems; simulation of vertically stacked 2D Nanosheet FETs; rowhammer mitigation; thermal radiation; energy efficiency in RISC-V.
New technical papers recently added to Semiconductor Engineering’s library:
| Technical Paper | Research Organizations |
|---|---|
| Modeling and Simulating Emerging Memory Technologies: A Tutorial | TU Dortmund, TU Dresden, KIT and FAU ErlangenNürnberg |
| Exploring Uncore Frequency Scaling for Heterogeneous Computing | University of Illinois Chicago and Argonne National Laboratory |
| First Demonstration of High-Performance and Extremely Stable W-Doped In2O3 Gate-All-Around (GAA) Nanosheet FET | Georgia Institute of Technology and Micron |
| Warpage in wafer-level packaging: a review of causes, modelling, and mitigation strategies | Arizona State University |
| Simulation of Vertically Stacked 2-D Nanosheet FETs | Università di Pisa and TU Wien |
| Securing DRAM at Scale: ARFM-Driven Row Hammer Defense with Unveiling the Threat of Short tRC Patterns | KAIST and Sk hynix |
| High-Temperature Strong Nonreciprocal Thermal Radiation from Semiconductors | University of Houston, California Institute of Technology and University of Wisconsin-Madison |
| Optimizing Energy Efficiency in Subthreshold RISC-V Cores | Norwegian University of Science and Technology (NTNU) |
Find all technical papers here.
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