Researchers at the Fraunhofer Institute for Integrated Systems and Device Technology IISB and ASML published a technical paper titled “Benefits of three-dimensional mask (M3D) effects in high-NA and hyper-NA EUV lithography.”
Excerpt: “This study aims to offer an alternative perspective on M3D effects in EUV lithography. We demonstrate that M3D effects can be harnessed under certain conditions to improve imaging fidelity for high-NA and hyper-NA EUV lithography.”
Find the technical paper here. July 2026.
Andreas Erdmann, Varun Jadhav, Gerardo Bottiglieri, et al. “Benefits of three-dimensional mask (M3D) effects in high-NA and hyper-NA EUV lithography,” Journal of Micro/Nanopatterning, Materials, and Metrology 25(3), 031607 (6 Jul 2026) https://doi.org/10.1117/1.JMM.25.3.031607
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