Researchers at the Fraunhofer Institute for Integrated Systems and Device Technology IISB and ASML published a technical paper titled “Benefits of three-dimensional mask (M3D) effects in high-NA and hyper-NA EUV lithography.”
Excerpt: “This study aims to offer an alternative perspective on M3D effects in EUV lithography. We demonstrate that M3D effects can be harnessed under certain co...
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