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Technical Paper Round-up: May 3


New technical papers added to Semiconductor Engineering’s library this week. [table id=24 /] Semiconductor Engineering is in the process of building this library of research papers. Please send suggestions (via comments section below) for what else you’d like us to incorporate. If you have research papers you are trying to promote, we will review them to see if they are a good fit for... » read more

Current Knowledge & Future Development In 2D Magnetic Materials Research


Abstract: "Magnetism in two-dimensional (2D) van der Waals (vdW) materials has recently emerged as one of the most promising areas in condensed matter research, with many exciting emerging properties and significant potential for applications ranging from topological magnonics to low-power spintronics, quantum computing, and optical communications. In the brief time after their discovery, 2D... » read more

Excess noise in high-current diamond diodes


Abstract "We report the results of an investigation of low-frequency excess noise in high-current diamond diodes. It was found that the electronic excess noise of the diamond diodes is dominated by the 1/f and generation-recombination noise, which reveals itself as Lorentzian spectral features (f is the frequency). The generation-recombination bulges are characteristic of diamond diodes with l... » read more

Blog Review: Oct. 6


Arizona State University's Jae-sun Seo and Arm's Paul Whatmough introduce a fully-parallel and fully-pipelined FPGA accelerator for sparse CNNs that can eliminate off-chip memory access and also efficiently support elementwise pruning of CNN weights. Cadence's Paul McLellan highlights trends seen at the recent Hot Chips, from machine learning and advanced packaging driving higher performance... » read more

IC Materials For Extreme Conditions


The number of materials being researched for chips used in extreme environments, such as landing on the planet Venus, is growing. While GaN has captured much of the attention for power conversion circuits, it's just one of several applications for semiconductors in extreme environments. The high voltage, high temperature, and caustic atmospheres found in many industrial and aerospace environ... » read more

What’s the Right Path For Scaling?


The growing challenges of traditional chip scaling at advanced nodes are prompting the industry to take a harder look at different options for future devices. Scaling is still on the list, with the industry laying plans for 5nm and beyond. But less conventional approaches are becoming more viable and gaining traction, as well, including advanced packaging and in-memory computing. Some option... » read more

Manufacturing Bits: Oct. 23


3D stacked finFETs At the upcoming 2018 IEEE International Electron Devices Meeting (IEDM), Imec is expected to present a paper on a 3D stacked finFET architecture. IEDM is slated from Dec. 1-5 in San Francisco. Imec’s technology is based what on the R&D organization calls sequential integration. Another R&D organization, Leti, calls it 3D monolithic integration. Regardless, the idea... » read more

Week in Review: IoT, Security, Auto


Internet of Things At Arm TechCon, Arm unveiled its Neoverse brand identity, providing an infrastructure foundation for 5G, the Internet of Things, edge computing, and other applications. The Arm Neoverse IP will proliferate next year from Arm and its technology partners. With Arm’s “Ares” platform, to be introduced in 2019, the company promises to deliver 30% per-generation performance ... » read more

AI Accelerating Discovery


In early April 2018, the Materials Research Society held their spring meeting and exhibit at the Phoenix, Arizona convention center. With more than 110 symposium presentations, it was difficult to select which sessions to attend. But one forum caught my eye, “AI for Materials Development”. These days AI seems to be everywhere. As we all speculate about the impact of AI on autonomous driv... » read more

Manufacturing Bits: April 10


Higher power GaN Imec and Qromis have announced the development of a new gallium nitride (GaN) substrate technology that enables power devices at 650 volts and above. GaN is an emerging technology for power semiconductor applications. Based on a GaN-on-silicon technology, GaN-based power semis operate at 650 volts and above. In simple terms, the buffer layers between the GaN device and the ... » read more

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