Chip Industry Technical Paper Roundup: April 8


New technical papers recently added to Semiconductor Engineering’s library. [table id=214 /] Find last week’s technical paper additions here. » read more

Electrically Controlled All-AFM Tunnel Junctions on Silicon with Large Room-Temperature Magnetoresistance (Northwestern)


A new technical paper titled "Electrically Controlled All-Antiferromagnetic Tunnel Junctions on Silicon with Large Room-Temperature Magnetoresistance" was published by researchers at Northwestern University, Universitat Jaume, California State University Northridge, Argonne National Lab, Politecnico diBari, and University of Messina. Abstract "Antiferromagnetic (AFM) materials are a pathway... » read more

Chip Industry’s Technical Paper Roundup: October 9


New technical papers added to Semiconductor Engineering’s library this week. [table id=153 /] More Reading Technical Paper Library home » read more

VCMA-Controlled MTJ Devices For Probabilistic Computing Applications


A technical paper titled “Probabilistic computing with voltage-controlled dynamics in magnetic tunnel junctions” was published by researchers at Northwestern University, University of Messina, Western Digital Corporation, and Universitat Jaume I. Abstract: "Probabilistic (p-) computing is a physics-based approach to addressing computational problems which are difficult to solve by convent... » read more

Chip Industry’s Technical Paper Roundup: July 12


New technical papers recently added to Semiconductor Engineering’s library: [table id=117 /] (more…) » read more

How Voltage-Controlled MRAM Devices Can Be Used To Create Unique Fingerprints Of Microelectronic Chips


A technical paper titled "Reconfigurable Physically Unclonable Functions Based on Nanoscale Voltage-Controlled Magnetic Tunnel Junctions" was published by researchers at Northwestern University, Western Digital Corporation, Fe Research Inc., and University of Messina. Abstract: "With the fast growth of the number of electronic devices on the internet of things (IoT), hardware-based securi... » read more

Field-free spin-orbit torque-induced switching of perpendicular magnetization in a ferrimagnetic layer with a vertical composition gradient


Abstract "Current-induced spin-orbit torques (SOTs) are of interest for fast and energy-efficient manipulation of magnetic order in spintronic devices. To be deterministic, however, switching of perpendicularly magnetized materials by SOT requires a mechanism for in-plane symmetry breaking. Existing methods to do so involve the application of an in-plane bias magnetic field, or incorporation o... » read more