Power/Performance Bits: Jan. 21


Two-layer MRAM Scientists at Tokyo Institute of Technology propose a simpler MRAM construction that could perform faster with less power than conventional memories. The idea relies on unidirectional spin Hall magnetoresistance (USMR), a spin-related phenomenon that could be used to develop MRAM cells with an extremely simple structure. The spin Hall effect leads to the accumulation of elect... » read more

Manufacturing Bits: Jan. 22


Open-source CVD Boise State University has developed an inexpensive chemical vapor deposition (CVD) system to enable the growth of two-dimensional (2D) materials. Using open-source designs and off-the-shelf components, researchers have developed an automated CVD system for $30,000 in hardware costs, according to Boise State in the journal PLoS One. 2D materials could enable a new class ... » read more

System Bits: May 9


Graphene adopts exotic electronic states In a platform that may be used to explore avenues for quantum computing, MIT researchers have found that a flake of graphene, when brought in close proximity with two superconducting materials, can inherit some of those materials’ superconducting qualities. They reminded that in normal conductive materials such as silver and copper, electric curren... » read more