Technical Paper Roundup: November 14


New technical papers added to Semiconductor Engineering’s library this week. [table id=165 /] More Reading Technical Paper Library home » read more

CMOS-Based HW Topology For Single-Cycle In-Memory XOR/XNOR Operations


A technical paper titled “CMOS-based Single-Cycle In-Memory XOR/XNOR” was published by researchers at University of Tennessee, University of Virginia, and Oak Ridge National Laboratory (ORNL). Abstract: "Big data applications are on the rise, and so is the number of data centers. The ever-increasing massive data pool needs to be periodically backed up in a secure environment. Moreover, a ... » read more

Week In Review: Auto, Security, Pervasive Computing


Automotive, mobility Siemens Digital Industries Software and climate-tech company sustamize devised a way to add carbon emissions data to Siemens Xcelerator. Siemens created its Teamcenter Carbon Footprint Calculator software to help teams measure, simulate, reduce, and track their product carbon footprint early in the development phase. The calculator uses sustamize’s Product Footprint Engi... » read more

Security Research: Technical Paper Round-Up


A number of hardware security-related technical papers were presented at recent conferences, including the August 2022 USENIX Security Symposium and IEEE’s International Symposium on Hardware Oriented Security and Trust (HOST). Topics include side-channel attacks and defenses (including on-chip mesh interconnect attacks), heterogeneous attacks on cache hierarchies, rowhammer attacks and mitig... » read more

Vehicle Security: Post-Quantum Security to the CAN Network


This new technical paper titled "PUF-Based Post-Quantum CAN-FD Framework for Vehicular Security" is published by researchers at University of Tennessee. Abstract "The Controller Area Network (CAN) is a bus protocol widely used in Electronic control Units (ECUs) to communicate between various subsystems in vehicles. Insecure CAN networks can allow attackers to control information between vit... » read more

Manufacturing Bits: March 9


Finding cures for coronavirus The Department of Energy’s Oak Ridge National Laboratory (ORNL) is using the world’s most powerful supercomputer to identify drug compounds and cures for the coronavirus. [caption id="attachment_24162601" align="alignleft" width="300"] Summit supercomputer. Source: Oak Ridge National Laboratory[/caption] The supercomputer, called Summit, has identified 7... » read more

Manufacturing Bits: Aug. 28


Neutron scattering The Department of Energy’s Oak Ridge National Laboratory has reached what the agency says is the world’s highest power level for a neutron source. Oak Ridge has several facilities, including the so-called Spallation Neutron Source (SNS). The SNS is used in a metrology field called neutron scattering. Used in physics, chemistry, biology, and materials science, neutron ... » read more

Manufacturing Bits: Aug. 9


Faster FEBIDs Focused electron beam induced deposition (FEBID) is generating steam in the industry. Still in the R&D stage, FEBID makes use of an electron beam from a scanning electron microscope. Basically, it decomposes gaseous molecules, which, in turn, deposit materials and structures on a surface at the nanoscale. One of the big applications is a futuristic manufacturing technology... » read more

Power/Performance Bits: March 1


Low power Wi-Fi Computer scientists and electrical engineers from the University of Washington came up with a way to generate Wi-Fi transmissions using 10,000 times less power than conventional methods and which consumes 1,000 times less power than existing energy-efficient wireless communication platforms such as Bluetooth Low Energy and Zigbee. The system, Passive Wi-Fi, uses backscatte... » read more

Manufacturing Bits: Jan. 14


MoS2 FETs Two-dimensional materials are gaining steam in the R&D labs. The 2D materials include graphene, boron nitride (BN) and the transition-metal dichalcogenides (TMDs). One TMD, molybdenum diselenide (MoS2), is an attractive material for use in future field-effect transistors (FETs). MoS2 has several properties, including a non-zero band gap, atomic scale thickness and pristine int... » read more

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