Chip Industry’s Technical Paper Roundup: May 2


New technical papers recently added to Semiconductor Engineering’s library: [table id=95 /] If you have research papers you are trying to promote, we will review them to see if they are a good fit for our global audience. At a minimum, papers need to be well researched and documented, relevant to the semiconductor ecosystem, and free of marketing bias. There is no cost involved for us p... » read more

GaN Power Devices: Stability, Reliability and Robustness Issues


A technical paper titled "Stability, Reliability, and Robustness of GaN Power Devices: A Review" was published by researchers at Virginia Polytechnic Institute and State University, Johns Hopkins University Applied Physics Laboratory, and Kyushu University. "Gallium nitride (GaN) devices are revolutionarily advancing the efficiency, frequency, and form factor of power electronics. However, t... » read more

Chip Industry’s Technical Paper Roundup: Apr. 18


New technical papers recently added to Semiconductor Engineering’s library: [table id=93 /]   If you have research papers you are trying to promote, we will review them to see if they are a good fit for our global audience. At a minimum, papers need to be well researched and documented, relevant to the semiconductor ecosystem, and free of marketing bias. There is no cost involv... » read more

Power Semiconductor Devices: Thermal Management and Packaging


A technical paper titled "Thermal management and packaging of wide and ultra-wide bandgap power devices: a review and perspective" was published by researchers at Virginia Polytechnic Institute and State University, U.S. Naval Research Laboratory, and Univ Lyon, CNRS. "This paper provides a timely review of the thermal management of WBG and UWBG power devices with an emphasis on packaged dev... » read more

Manufacturing Bits: Dec. 23


Gallium oxide transistors At the recent IEEE International Electron Devices Meeting (IEDM), Cornell University and Hosei University presented a paper on a gallium oxide vertical transistor with a record breakdown voltage. Crystalline beta gallium oxide is a promising wide bandgap semiconductor material, which is used for power semiconductor applications. Gallium oxide has a large bandgap of... » read more

System Bits: June 18


Another win for aUToronto Photo credit: University of Toronto The University of Toronto’s student-led self-driving car team racked up its second consecutive victory last month at the annual AutoDrive Challenge in Ann Arbor, Mich. The three-year challenge goes out to North American universities, offering a Chevrolet Bolt electric vehicle to outfit with autonomous driving technology.... » read more