Film Failure in Multilayer Systems for Semiconductor Devices


Researchers at MIT, Yonsei University (Seoul, Korea) just published this technical paper titled "Interfacial Delamination at Multilayer Thin Films in Semiconductor Devices." According to the abstract "In this work, the effect of thermomechanical stress on the failure of multilayered thin films on Si substrates was studied using analytical calculations and various thermomechanical tests." ... » read more

Research Bits: June 21


Side-channel protection for edge AI Researchers from the Massachusetts Institute of Technology built a chip that can defend against power side-channel attacks targeting machine learning computations in smartwatches, smartphones, and tablets. Side-channel attacks involve observing a facet of the device's operation, in this case power, to deduce secrets. “The goal of this project is to buil... » read more

System Bits: Aug. 5


Algorithm could advance quantum computing Scientists at the Los Alamos National Laboratory report the development of a quantum computing algorithm that promises to provide a better understanding of the quantum-to-classical transition, enabling model systems for biological proteins and other advanced applications. “The quantum-to-classical transition occurs when you add more and more parti... » read more

Power/Performance Bits: June 18


Multi-value logic transistor Researchers at the University of Texas at Dallas, Hanyang University, Gwangju Institute of Science and Technology, Yonsei University, Kookmin University, and Ulsan National Institute of Science and Technology developed and fabricated a transistor capable of storing intermediate values between 0 and 1. Such a multi-value logic transistor would allow more operations ... » read more

Power/Performance Bits: July 26


Flexible MRAM Researchers from the National University of Singapore, Yonsei University, Ghent University and Singapore's Institute of Materials Research and Engineering embedded a magnetic memory chip on a plastic material, flexible enough to be bent into a tube. The new device operates on magnetoresistive random access memory (MRAM), which uses a magnesium oxide (MgO)-based magnetic tunn... » read more

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