A new technical paper titled “Edge-Contact MoS2 Transistors Fabricated Using Thermal Scanning Probe Lithography” was published by researchers at École Polytechnique Fédérale de Lausanne (EPFL).
“Thermal scanning probe lithography (t-SPL) is a gentle alternative to the typically used electron beam lithography to fabricate these devices avoiding the use of electrons, which are well known to deteriorate the 2DMs’ [two-dimensional materials] properties. Here, t-SPL is used for the fabrication of MoS2-based field effect transistors (FETs). In particular, the use of t-SPL is demonstrated for the first time for the fabrication of edge-contact MoS2 FETs, combining the hot-tip patterning and Ar+ milling to etch the 2DM,” the paper states.
Find the technical paper here. Published Sept. 2022.
Citation:
Ana Conde-Rubio, Xia Liu, Giovanni Boero, and Jürgen Brugger
ACS Applied Materials & Interfaces 2022 14 (37), 42328-42336
DOI: 10.1021/acsami.2c10150
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