Testing interposer-based versions of stacked die and future versions using through-silicon vias.
Three-dimensional stacked integrated circuits (3D-ICs) are composed of multiple stacked die, and are viewed as critical in helping the semiconductor industry keep pace with Moore’s Law. Current integration and interconnect methods include wirebond and flip-chip and have been in production for some time.
3D chips connected via interposers are in production at Xilinx, Samsung, IBM, and Sematech [1]. Interposers are providing the logical first step to industrialization of 3D based on through-silicon vias (TSV)s. The next generation of 3D integration incorporates TSV technology as the primary method of interconnect between the die.
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