A framework to analyze the stochastic behavior of magnetic tunnel junctions and generate Verilog-A compact models.
Read the full technical paper. Published June 9, 2021.
This paper presents a physics-based modeling framework for the analysis and transient simulation of circuits containing Spin-Transfer Torque (STT) Magnetic Tunnel Junction (MTJ) devices. The framework provides the tools to analyze the stochastic behavior of MTJs and to generate Verilog-A compact models for their simulation in large VLSI designs, addressing the need for an industry-ready model accounting for real-world reliability and scalability requirements. Device dynamics are described by the Landau-Lifshitz-Gilbert-Slonczewsky (s-LLGS) stochastic magnetization considering Voltage-Controlled Magnetic Anisotropy (VCMA) and the non-negligible statistical effects caused by thermal noise. Model behavior is validated against the OOMMF magnetic simulator and its performance is characterized on a 1-Mb 28 nm Magnetoresistive-RAM (MRAM) memory product.
García-Redondo, F., Prabhat, P., Bhargava, M., and Dray, C., Arm, “A Compact Model for Scalable MTJ Simulation”, arXiv e-prints arXiv:2106.04976 [cs.ET], 2021.
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