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Unraveling DRAM SAQP Process Complexity With Monte Carlo Virtual Fabrication


By Swapnil Kailash More and Roopa Hegde As DRAM technologies scale to increasingly tighter pitches, the patterning requirements exceed the limits of conventional single-exposure DUV lithography. In advanced nodes such as D1b (1-beta), active-area (AA) pitches fall in the range of 22 to 26 nm, well below the capability of single patterning. To achieve these sub-lithographic dimensions, advan... » read more