By Swapnil Kailash More and Roopa Hegde
As DRAM technologies scale to increasingly tighter pitches, the patterning requirements exceed the limits of conventional single-exposure DUV lithography. In advanced nodes such as D1b (1-beta), active-area (AA) pitches fall in the range of 22 to 26 nm, well below the capability of single patterning. To achieve these sub-lithographic dimensions, advan...
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