A Study Of Next-Generation CFET Process Integration Options

Decision making is a critical step in semiconductor technology development. R&D semiconductor engineers must consider different design and process options early in the development of a next-generation technology. Established techniques such as Failure Mode and Effect Analysis (FMEA) can be used to select among the most promising design and process choices. Once specific design and process m... » read more

How FinFET Device Performance Is Affected By Epitaxial Process Variations

By Shih-Hao (Jacky) Huang and Yu De Chen As the need to scale transistors to ever-smaller sizes continues to press on technology designers, the impact of parasitic resistance and capacitance can approach or even outpace other aspects of transistor performance, such as fringing capacitance or source drain resistance. The total resistance in a device is comprised of two components: internal re... » read more

Advanced Patterning Techniques For 3D NAND Devices

By Yu De Chen and Jacky Huang Driven by Moore’s law, memory and logic semiconductor manufacturers pursue higher transistor density to improve product cost and performance [1]. In NAND Flash technologies, this has led to the market dominance of 3D structures instead of 2D planar devices. Device density can be linearly increased by increasing stack layer counts in a 3D NAND device [2]. At th... » read more

Controlling Variability Using Semiconductor Process Window Optimization

To ensure success in semiconductor technology development, process engineers must set the allowed ranges for wafer process parameters. Variability must be controlled, so that final fabricated devices meet required specifications. These specifications include critical dimensions, electrical performance requirements, and other device characteristics. Pre-production or ramp-up production Si wa... » read more

Challenges And Solutions For Silicon Wafer Bevel Defects During 3D NAND Flash Manufacturing

As semiconductor technology scales down in size, process integration complexity and defects are increasing in 3D NAND flash, partially due to larger stack deposits and thickness variability between the wafer center and the wafer edge. Industry participants are working to reduce defect density at the wafer edge to improve overall wafer yield. Attention has focused on common wafer bevel defects s... » read more

Connecting Wafer-Level Parasitic Extraction And Netlisting

The semiconductor technology simulation world is typically divided into device-level TCAD (technology CAD) and circuit-level compact modeling. Larger EDA companies provide high-level design simulation tools that perform LVS (layout vs. schematic), DRC (design rule checking), and many other software solutions that facilitate the entire design process at the most advanced technology nodes. In thi... » read more

Improving SAQP Patterning Yield Using Virtual Fabrication And Advanced Process Control

Advanced logic scaling has created some difficult technical challenges, including a requirement for highly dense patterning. Imec recently confronted this challenge, by working toward the use of Metal 2 (M2) line patterning with a 16 nm half-pitch for their 7nm node (equivalent to a 5nm foundry node). Self-Aligned Quadruple Patterning (SAQP) was investigated as an alternative path to Extreme Ul... » read more

Creating Higher Density 3D NAND Structures

3D NAND flash memory has enabled a new generation of non-volatile solid-state storage useful in nearly every electronic device imaginable. 3D NAND can achieve data densities exceeding those of 2D NAND structures, even when fabricated on later generation technology nodes. The methods used to increase storage capacity come with potentially significant tradeoffs in memory storage, structural sta... » read more

Analyzing Worst-Case Silicon Photonic Device Performance Through Process Modeling And Optical Simulation

Silicon photonics is an emerging and rapidly-expanding design platform that promises to enable higher-bandwidth communication and other applications. One of the best qualities of silicon photonics is its ability to leverage existing CMOS fabrication equipment and process flows. However, this means that it is subject to the same process defects and variations. Previous blog posts [References 1,2... » read more

3D NAND: Challenges Beyond 96-Layer Memory Arrays

Unlike scaling practices in 2D NAND technology, the direct way to reduce bit costs and increase chip density in 3D NAND is by adding layers. In 2013, Samsung shipped the first V-NAND product using 24 layers and MLC [1]. Five years later, in 2018, vendors of 3D-NAND have all announced production plans for 96-Layer NAND using TLC [2]. According to recent news reports, vendors are already working ... » read more

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