category: Manufacturing, Packaging and Materials

category: IoT, Security & Automotive

MEMS And Imaging Drive The Sensor Revolution
By Ana Bernardo - 23 Jan, 2025 - Comments: 0

By Ana Bernardo and Sitong He As the world becomes increasingly interconnected, MEMS and imaging sensor technologies are driving transformative changes across industries, shaping the future of connectivity, intelligence, and sustainability. Powered by advances in miniaturization, AI integration, and sustainable design, MEMS and imaging technologies are enabling groundbreaking applications—... » read more

Improving GaN Device Architectures
By Katherine Derbyshire - 23 Jan, 2025 - Comments: 0

As the universe of applications for power devices grows, designers are finding that no single semiconductor can cover the full range of voltage and current requirements. Instead, combination circuits use different materials for different parts of the overall operating range. GaN is especially well-established in low-power applications like chargers for personal electronics, while silicon and... » read more

Global IC Fabs And Facilities Report: 2024
By Liz Allan - 21 Jan, 2025 - Comments: 0

The chip industry made significant capital investments this year to build new fabs and facilities or expand existing premises. A number of sites were dedicated to SiC, GaN, DRAM, HBM, along with packaging and assembly by OSATs, and essential gases, chemicals, and other components. More than a dozen R&D centers were also established for 8-inch wafers, EUV, and advanced packaging. Investments... » read more

What’s Next For Through-Silicon Vias
By Laura Peters - 06 Jan, 2025 - Comments: 0

From large TSVs for MEMS to nanoTSVs for backside power delivery, cost-effective process flows for these interconnects are essential for making 2.5D and 3D packages more feasible. Through-silicon vias (TSVs) enable shorter interconnect lengths, which reduces chip power consumption and latency to carry signals faster from one device to another or within a device. Advanced packaging technology... » read more

Optimizing New Interconnect Technologies To Support Next-Generation Semiconductor Devices
By Assawer Soussou - 18 Dec, 2024 - Comments: 0

Interconnects are the wiring system that connect together the components of a semiconductor device and permit these components to work together. One of the key metrics of any semiconductor interconnect scheme is the metal pitch size. Metal pitch is the minimum distance between the centers of two horizontal interconnects in a semiconductor. It's a key metric used to measure the progress of chip ... » read more

Heterogenous Integration Expertise for Sensors and MEMS Packaging and Assembly
By Promex Industries - 18 Dec, 2024 - Comments: 0

Sensors and microelectromechanical systems (MEMS) are unlocking new design possibilities for miniature devices used in healthcare, smart systems, consumer electronics, and more. Designers need a partner experienced with Heterogenous Integration (HI) to assemble the unique components for these devices and address the complications of these integrations. In this white paper, you will learn: ... » read more

Laser Ablation Dicing Revolutionizes Ultra-Thin Wafer Saws Beyond The Capability Of Blade Dicing
By Siang Miang Yeo - 17 Dec, 2024 - Comments: 0

The demand for consistently high electrical performance in the power discrete semiconductor market has driven component developers to continuously enhance semiconductor assembly packaging technology through advanced package design and wafer fabrication methods. Among the cost-effective approaches are increasing the die area size and decreasing the die thickness, which minimize electrical resist... » read more

TCAD Simulation Challenges For Gate-All-Around Transistors
By Victor Moroz - 17 Dec, 2024 - Comments: 0

By Victor Moroz and Shela Aboud The transition from finFET technology to Gate-All-Around (GAA) technology helps to reduce transistor variability and resume channel length scaling. It also brings several new challenges in terms of transistor design that need to be addressed. One of the challenges is handling the thin Si layers that come with GAA technology, where Si channel thickness scale... » read more

Baby Steps Toward 3D DRAM
By Bryon Moyer - 17 Dec, 2024 - Comments: 0

Flash memory has made incredible capacity strides thanks to monolithic 3D processing enabled by the stacking of more than 200 layers, which is on its way to 1.000 layers in future generations.[1] But the equally important DRAM has achieved a similar manufacturable 3D architecture. The need for a sufficiently large means of storing charge — such as a capacitor — has proved elusive. Severa... » read more

Do More With Less In Semiconductor Manufacturing
By David Park - 17 Dec, 2024 - Comments: 0

The recent resolution of labor disputes sheds light on a universal concern: the balance between automation and workforce dynamics. These situations mirror a challenge faced in semiconductor manufacturing—embracing AI without displacing the people driving the industry. Moving beyond automation fears US port workers expressed concerns about automation technologies, such as autonomous cranes a... » read more

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