Research on Wire Sweep of Integrated Circuit Packaging Based on Three-dimensional Flow Simulation


Abstract: "Semiconductor manufacturing technology is becoming more and more rapidly. In the process of Integrated Circuit (IC) encapsulation, when wires contact each other, it will cause short circuit. Wire sweep has become the main factor affecting the reliability of the product. Therefore, it is a great challenge to master wire sweep in IC packaging process. This paper takes Low Profile Fi... » read more

Buried nanomagnet realizing high-speed/low-variability silicon spin qubits: implementable in error-correctable large-scale quantum computers


Abstract: "We propose a buried nanomagnet (BNM) realizing highspeed/low-variability silicon spin qubit operation, inspired by buried wiring technology, for the first time. High-speed quantum-gate operation results from large slanting magnetic-field generated by the BNM disposed quite close to a spin qubit, and low-variation of fidelity thanks to the self-aligned fabrication process. Employing ... » read more

Uniform Spin Qubit Devices with Tunable Coupling in an All-Silicon 300 mm Integrated Process


Abstract: Larger arrays of electron spin qubits require radical improvements in fabrication and device uniformity. Here we demonstrate excellent qubit device uniformity and tunability from 300K down to mK temperatures. This is achieved, for the first time, by integrating an overlapping polycrystalline silicon-based gate stack in an ‘all-Silicon’ and lithographically flexible 300mm flow. ... » read more

Reaching silicon-based NEMS performances with 3D printed nanomechanical resonators


Abstract: "The extreme miniaturization in NEMS resonators offers the possibility to reach an unprecedented resolution in high-performance mass sensing. These very low limits of detection are related to the combination of two factors: a small resonator mass and a high quality factor. The main drawback of NEMS is represented by the highly complex, multi-steps, and expensive fabrication process... » read more

MXene-GaN van der Waals metal-semiconductor junctions for high performance multiple quantum well photodetectors


Abstract: "A MXene-GaN-MXene based multiple quantum well photodetector was prepared on patterned sapphire substrate by facile drop casting. The use of MXene electrodes improves the responsivity and reduces dark current, compared with traditional Metal-Semiconductor-Metal (MSM) photodetectors using Cr/Au electrodes. Dark current of the device using MXene-GaN van der Waals junctions is reduced b... » read more

A quantitative model for the bipolar amplification effect: A new method to determine semiconductor/oxide interface state densities


Abstract "We report on a model for the bipolar amplification effect (BAE), which enables defect density measurements utilizing BAE in metal–oxide–semiconductor field-effect transistors. BAE is an electrically detected magnetic resonance (EDMR) technique, which has recently been utilized for defect identification because of the improved EDMR sensitivity and selectivity to interface defects.... » read more

Dual Surface Architectonics for Directed Self‐Assembly of Ultrahigh‐Resolution Electronics


Abstract: "The directed self‐assembly of electronic circuits using functional metallic inks has attracted intensive attention because of its high compatibility with extensive applications ranging from soft printed circuits to wearable devices. However, the typical resolution of conventional self‐assembly technologies is not sufficient for practical applications in the rapidly evolving addi... » read more

Multicolored Nanocolloidal Hydrogel Inks For Anti-Counterfeiting


Abstract "Nanocolloidal gels are emerging as a promising class of materials with applications as inks in 2D and 3D printing. Polymer nanoparticles (NPs) offer many advantages as potential building blocks of nanocolloidal gels, due to the ability to control NP dimensions, charge, surface chemistry, and functionality; however, their applications as inks in printing are yet to be explored. Here, ... » read more

Probe assisted localized doping of aluminum into silicon substrates


Abstract "This paper discusses the development of a rapid, large-scale integration of deterministic dopant placement technique for encoding information in physical structures at the nanoscale. The doped structures inherit identical and customizable radiofrequency (RF) electronic signature, which could be leveraged into an identification feature unique to the tag item. This will allow any manuf... » read more

Nanoporous Dielectric Resistive Memories Using Sequential Infiltration Synthesis


Abstract "Resistance switching in metal–insulator–metal structures has been extensively studied in recent years for use as synaptic elements for neuromorphic computing and as nonvolatile memory elements. However, high switching power requirements, device variabilities, and considerable trade-offs between low operating voltages, high on/off ratios, and low leakage have limited their utility... » read more

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