Fermi-level Tuning Improves Device Stability of 2D Transistors With Amorphous Gate Oxides


New technical paper titled "Improving stability in two-dimensional transistors with amorphous gate oxides by Fermi-level tuning" from researchers at Institute for Microelectronics, TU Wien, AMO GmbH, University of Wuppertal, and RWTH Aachen University. Abstract "Electronic devices based on two-dimensional semiconductors suffer from limited electrical stability because charge carriers origin... » read more

Scalable Approach to Fabricate Memristor Arrays at Wafer-scale


New technical paper titled "Wafer-scale solution-processed 2D material analog resistive memory array for memory-based computing" from researchers at National University of Singapore and Institute of High Performance Computing, Singapore. Abstract "Realization of high-density and reliable resistive random access memories based on two-dimensional semiconductors is crucial toward their develop... » read more

UT Dallas: Electronic, Thermodynamic & Dielectric Properties of Two Novel vdW Materials


New technical paper titled "A First-Principles Study on the Electronic, Thermodynamic and Dielectric Properties of Monolayer Ca(OH)2 and Mg(OH)2," from University of Texas at Dallas. With funding support from National Science Foundation and U.S. Department of Defense,  Defense Threat Reduction Agency. Abstract "We perform first-principles calculations to explore the electronic, thermodynam... » read more

Differentiable Analog Nonvolatile CAM (dCAM) Using Memristors


Technical paper titled "Differentiable Content Addressable Memory with Memristors" from researchers at Hewlett Packard Labs and University of Hong Kong. Abstract "Memristors, Flash, and related nonvolatile analog device technologies offer in-memory computing structures operating in the analog domain, such as accelerating linear matrix operations in array structures. These take advantage of ... » read more

Nanosheet GeSn pTFTs: High Performance, Low Thermal Budget


New technical paper titled "Remarkably High-Performance Nanosheet GeSn Thin-Film Transistor" from researchers at National Yang Ming Chiao Tung University and others. Abstract "High-performance p-type thin-film transistors (pTFTs) are crucial for realizing low-power display-on-panel and monolithic three-dimensional integrated circuits. Unfortunately, it is difficult to achieve a high hole ... » read more

Thinning of GaN-on-GaN HEMTs With A Laser Slicing Technique


New technical paper "Laser slice thinning of GaN-on-GaN high electron mobility transistors" from researchers at Nagoya University, Hamamatsu Photonics, and National Institute for Materials Science, Tsukuba. Abstract "As a newly developed technique to slice GaN substrates, which are currently very expensive, with less loss, we previously reported a laser slicing technique in this journal. In... » read more

Miniaturized Liquid Metal-based Flexible Electrochemical Detection System on Fabric


Researchers from Beihang University (Beijing), Zhejiang University, and Tsinghua University. Abstract "Integrated electrochemical sensing platforms in wearable devices have great prospects in biomedical applications. However, traditional electrochemical platforms are generally fabricated on airtight printed circuit boards, which lack sufficient flexibility, air permeability, and conformab... » read more

Current Knowledge & Future Development In 2D Magnetic Materials Research


Abstract: "Magnetism in two-dimensional (2D) van der Waals (vdW) materials has recently emerged as one of the most promising areas in condensed matter research, with many exciting emerging properties and significant potential for applications ranging from topological magnonics to low-power spintronics, quantum computing, and optical communications. In the brief time after their discovery, 2D... » read more

Pyrolyzed Cellulose Nanofiber Paper (CNP) Semiconductor with a 3D Network Structure


Abstract Semiconducting nanomaterials with 3D network structures exhibit various fascinating properties such as electrical conduction, high permeability, and large surface areas, which are beneficial for adsorption, separation, and sensing applications. However, research on these materials is substantially restricted by the limited trans-scalability of their structural design and tunability of... » read more

Efficacy of Transistor Interleaving in DICE Flip-Flops at a 22 nm FD SOI Technology Node


New research paper from University of Saskatchewan, with funding by NSERC and the Cisco University Research Program. Abstract "Fully Depleted Silicon on Insulator (FD SOI) technology nodes provide better resistance to single event upsets than comparable bulk technologies, but upsets are still likely to occur at nano-scale feature sizes, and additional hardening techniques should be explor... » read more

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