category: Transistors

category: IoT, Security & Automotive

Biocompatible Bilayer Graphene-Based Artificial Synaptic Transistors (BLAST) Capable of Mimicking Synaptic Behavior
By Technical Paper Link - 10 Aug, 2022 - Comments: 0

This new technical paper titled "Metaplastic and energy-efficient biocompatible graphene artificial synaptic transistors for enhanced accuracy neuromorphic computing" was published by researchers at The University of Texas at Austin and Sandia National Laboratories. Abstract "CMOS-based computing systems that employ the von Neumann architecture are relatively limited when it comes to para... » read more

Reservoir Computing HW Based on a CMOS-Compatible FeFET
By Technical Paper Link - 07 Aug, 2022 - Comments: 0

A new technical paper titled "Reservoir computing on a silicon platform with a ferroelectric field-effect transistor" was published by researchers at the University of Tokyo. Researchers report "reservoir computing hardware based on a ferroelectric field-effect transistor (FeFET) consisting of silicon and ferroelectric hafnium zirconium oxide. The rich dynamics originating from the ferroelec... » read more

Fully CMOS-compatible Ternary Inverter with a Memory Function Using Silicon Feedback Field-Effect Transistors (FBFETs)
By Technical Paper Link - 02 Aug, 2022 - Comments: 0

New technical paper titled "New ternary inverter with memory function using silicon feedback field-effect transistors" was published from researchers at Korea University. Abstract: In this study, we present a fully complementary metal–oxide–semiconductor-compatible ternary inverter with a memory function using silicon feedback field-effect transistors (FBFETs). FBFETs operate with a pos... » read more

Fabrication And Characterization Of Junctionless FETs
By Technical Paper Link - 02 Aug, 2022 - Comments: 0

New technical paper titled "Planar Junctionless Field-Effect Transistor for Detecting Biomolecular Interactions"  was published from researchers at Max Planck Center for Complex Fluid Dynamics, University of Twente, University of Glasgow, and Luxembourg Institute of Science and Technology (LIST). Abstract "Label-free field-effect transistor-based immunosensors are promising candidates for ... » read more

Reporting and Benchmarking Process For A 2D Semiconductor FET
By Technical Paper Link - 29 Jul, 2022 - Comments: 0

New research paper titled "How to Report and Benchmark Emerging Field-Effect Transistors" was published from researchers at NIST, Purdue University, UCLA, Theiss Research, Peking University, NYU, Imec, RWTH Aachen, and others. "Emerging low-dimensional nanomaterials have been studied for decades in device applications as field-effect transistors (FETs). However, properly reporting and compar... » read more

Define & Grow III–V Vertical Nanowires At A High Footprint Density on a Si Platform
By Technical Paper Link - 29 Jul, 2022 - Comments: 0

New technical paper titled "Directed Self-Assembly for Dense Vertical III–V Nanowires on Si and Implications for Gate All-Around Deposition" is published from researchers at Lund University in Sweden. Abstract: "Fabrication of next generation transistors calls for new technological requirements, such as reduced size and increased density of structures. Development of cost-effective proc... » read more

Split-Gate FETs (SG-FETs)
By Technical Paper Link - 21 Jul, 2022 - Comments: 0

This technical paper titled "Longitudinal and latitudinal split-gate field-effect transistors for NAND and NOR logic circuit applications" was published by researchers at Department of Electrical and Computer Engineering, Inha University (South Korea) and Korea Institute of Science and Technology (KIST), Seoul. Abstract "Two-dimensional (2D) materials have been extensively adopted in variou... » read more

New Way To Control Spin Currents At Room Temperature
By Technical Paper Link - 13 Jul, 2022 - Comments: 0

New technical paper titled "Spin manipulation by giant valley-Zeeman spin-orbit field in atom-thick WSe2." from researchers at Beihang University (China) and University of British Columbia. Abstract: "The phenomenon originating from spin–orbit coupling provides energy-efficient strategies for spin manipulation and device applications. The broken inversion symmetry interface and the result... » read more

FEOL Nanosheet Process Flow & Challenges Requiring Metrology Solutions (IBM Watson)
By Technical Paper Link - 08 Jul, 2022 - Comments: 0

New technical paper titled "Review of nanosheet metrology opportunities for technology readiness," from researchers at IBM Thomas J. Watson Research Ctr. (United States). Abstract (partial): "More than previous technologies, then, nanosheet technology may be when some offline techniques transition from the lab to the fab, as certain critical measurements need to be monitored in real time. T... » read more

One Transistor Process-in-Memory Device Strategy w/ Multi-Functional Multi-Gate One-transistor (MGT) Design of Multiple Electrodes
By Technical Paper Link - 04 Jul, 2022 - Comments: 0

New technical paper titled "Multi-functional multi-gate one-transistor process-in-memory electronics with foundry processing and footprint reduction" from researchers at Ningbo Institute of Materials Technology and Engineering (Chinese Academy of Sciences), Center of Materials Science and Optoelectronics Engineering (University of Chinese Academy of Sciences), Shanghai Institute of Microsystem ... » read more

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