New low-temp growth and fabrication technology allows Integration Of 2D materials directly onto silicon circuit; memristors and switching behavior; vision and strategy for NSTC; gate drive circuit suitable for a GaN gate injection transistor; automotive ethernet trends; manufacturing printed neuromorphic circuits; HW-assisted remote attestation design for critical embedded systems.
New technical papers recently added to Semiconductor Engineering’s library:
Technical Paper | Research Organizations |
---|---|
Low-thermal-budget synthesis of monolayer molybdenum disulfide for silicon back-end-of-line integration on a 200 mm platform | MIT, Oak Ridge National Laboratory, and Ericsson Research |
A Perspective on Ethernet in Automotive Communications—Current Status and Future Trends | University of Catania |
Gate Drive Circuit Suitable for a GaN Gate Injection Transistor | Nagoya University |
Split Additive Manufacturing for Printed Neuromorphic Circuits | Karlsruher Institut für Technologie (KIT) |
Hardware-assisted remote attestation design for critical embedded systems | University of Oxford |
Resistive Switching and Current Conduction Mechanisms in Hexagonal Boron Nitride Threshold Memristors with Nickel Electrodes | RWTH Aachen University and Peter Gruenberg Institute |
A Vision and Strategy for the National Semiconductor Technology Center | NIST |
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