Measures to minimize the capacitive load of the protections by developing a transmitter that is intrinsically robust to ESD.
In addressing the challenges of enhancing ESD resilience for high-speed SerDes interfaces, it’s crucial to ensure the implementation of appropriate ESD protection measures. This is particularly vital during the device’s lifecycle from the conclusion of silicon wafer processing to system assembly, a phase during which electronic devices are highly susceptible to Electrostatic Discharge (ESD) damage.
To mitigate yield loss due to ESD damage during this initial phase, we incorporate specific on-chip ESD protection strategies, thereby enhancing ESD robustness, particularly for high-speed interfaces. This level of protection is gauged against standards such as the Charged Device Model (CDM) and Human Body Model (HBM).This white paper identifies the challenges that current finFET technologies face with traditional ESD protection methods, and underscores the necessity for enhanced protection strategies in order to satisfy the demands of high-speed SerDes interfaces, such as the 224G and 112G Ethernet PHY IP and the PCI Express® IP. To address this demand, this whitepaper discusses measures to minimize the capacitive load of the protections by developing a transmitter that is intrinsically robust to ESD.
Click here to read on to understand the proposed circuit topology and layout checks to verify ESD robust architectures and correct implementation.
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