ESD Co-Design For 224G And 112G SerDes In FinFET Technologies


In addressing the challenges of enhancing ESD resilience for high-speed SerDes interfaces, it's crucial to ensure the implementation of appropriate ESD protection measures. This is particularly vital during the device's lifecycle from the conclusion of silicon wafer processing to system assembly, a phase during which electronic devices are highly susceptible to Electrostatic Discharge (ESD) dam... » read more

Dangerous Electricity


Electricity to the modern age is as indispensible as air, but too much can be a bad thing for automotive and aerospace applications—especially when it is in the form of electrostatic discharge (ESD). As chips advance to 28nm, 20nm and 16nm, the design window for electrostatic discharge is shrinking for a number of reasons, explained Norman Chang is vice president and senior product strategis... » read more