ESD Verification For 2.5D And 3D-ICs

By Siemens EDA - 10 Dec, 2024 - Comments: 0

Ensuring your integrated circuit (IC) design can withstand electrostatic discharge (ESD) events without incurring damage or failure is an extremely important activity in IC circuit design and verification. While automated flows for ESD verification are well-established for regular 2D ICs, 2.5D and 3D integration presents new challenges in both ESD design and verification. The new automated ESD ... » read more

Efficient ESD Verification For 2.5/3D Automotive ICs

By Dina Medhat - 09 Dec, 2024 - Comments: 0

Protection against electrostatic discharge (ESD) events is an extremely important aspect of integrated circuit (IC) design and verification, particularly for 2.5/3D designs targeted for automotive systems. ESD events cause severe damage to ICs due to a sudden and unexpected flow of electrical current between two electrically charged objects. This current may be caused by contact, an electrical ... » read more

Research Bits: Nov. 25

By Jesse Allen - 25 Nov, 2024 - Comments: 0

3D-printed ESD protection Researchers from Lawrence Livermore National Laboratory developed a printable elastomeric silicone foam for electronics packaging that provides both mechanical and electrostatic discharge (ESD) protection. The team used a 3D printing technique called direct ink writing (DIW), an extrusion process in which a paste with controlled rheological properties such as elast... » read more

Design Optimal ESD Protection With Context-Aware SPICE Simulation

By Neel Natekar - 29 Aug, 2024 - Comments: 0

Electrostatic discharge (ESD) is a major reliability concern for modern ICs. Ensuring the robustness of ICs in an ESD event by providing adequate ESD protection is proving to be a major challenge for IC designers due to factors such as shrinking of the design features, reduction in gate oxide thickness, increase in the contact and interconnect resistance and an increase in the overall design co... » read more

Powering CFETs From The Backside

By Katherine Derbyshire - 21 Mar, 2024 - Comments: 0

The first CMOS circuits to incorporate backside power connections are likely to be based on stacked nanosheet transistors, but further down the road, planners envision complementary transistors (CFETs) that vertically integrate stacked NFET and PFET devices. With at least twice the thickness of a nanosheet transistor, connecting CFETs to each other and to the rest of the circuit is likely to... » read more

Closing The Test And Metrology Gap In 3D-IC Packages

By Gregory Haley - 12 Dec, 2023 - Comments: 0

The industry is investing in more precise and productive inspection and testing to enable advanced packages and eventually, 3D ICs. The next generations of aerospace, automotive, smartphone, and wearable tech most likely will be powered by multiple layers of intricately connected silicon, a stark departure from the planar landscapes of traditional integrated circuits. These 3D-ICs, compos... » read more

Successful 3D-IC Design, Verification, And Analysis Requires An Integrated Approach

By Siemens EDA - 30 Nov, 2023 - Comments: 0

3D-IC designs enable improvements in performance, power, footprint, and costs that cannot be attained in system-on-chip (SoC) and IC design. However, the leap from traditional SoC/IC design to 3D-IC designs brings not only new opportunities, but also new challenges. Siemens EDA provides multiple 3D-IC design analysis and verification functionalities that address the diverse needs of 3DIC des... » read more

What To Do About Electrostatic Discharge

By Ed Sperling - 20 Nov, 2023 - Comments: 0

Electrostatic discharge is a well-understood phenomenon, but it’s becoming more difficult to plan for as single chips are replaced by multiple chips or chiplets in a package, and as the density of components continues to increase with each new node. In both cases, the probability for failure increases unless these sudden shocks are addressed in the design. Dermott Lynch, director of product m... » read more

ESD Co-Design For 224G And 112G SerDes In FinFET Technologies

By Synopsys - 25 Oct, 2023 - Comments: 0

In addressing the challenges of enhancing ESD resilience for high-speed SerDes interfaces, it's crucial to ensure the implementation of appropriate ESD protection measures. This is particularly vital during the device's lifecycle from the conclusion of silicon wafer processing to system assembly, a phase during which electronic devices are highly susceptible to Electrostatic Discharge (ESD) dam... » read more

ESD Co-Design For High-Speed SerDeS In FinFET Technologies

By Synopsys - 07 Jun, 2023 - Comments: 0

An electronic device is susceptible to Electrostatic Discharge (ESD) damage during its entire life cycle, including the phase from the completion of the silicon wafer processing to when the device (die) is assembled in the system. To avoid yield loss due to ESD damage during this early phase, on-chip ESD protection measures are applied to provide a certain degree of ESD robustness. The componen... » read more

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