A new technical paper titled “Lateral double magnetic tunnel junction device with orthogonal polarizer for high-performance magnetoresistive memory” was published by researchers at Hanyang University.
Find the technical paper here. Published November 2022.
Sin, S., Oh, S. Lateral double magnetic tunnel junction device with orthogonal polarizer for high-performance magnetoresistive memory. Sci Rep 12, 19762 (2022). https://doi.org/10.1038/s41598-022-24075-y.
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