A new technical paper titled “Nonvolatile electrochemical memory at 600°C enabled by composition phase separation” was published by researchers at University of Michigan and Sandia National Laboratories.
“Moore’s law has led to monumental advances in computing over the past 50 years. However, one shortcoming of silicon-based logic and memory devices is their limited temperature range, typically <150°C. In this work, we present a solid-state memory device that can operate and store information at temperatures as high as 600°C. Rather than relying on the motion of electrons, this device stores information through the electrochemical migration of oxygen ions in transition metal oxides, a process that resembles that of solid oxide fuel cells and batteries. This memory device can expand the use of microelectronics in extreme environments, like deep energy wells, turbine engines, and space,” states the paper.
Find the technical paper here. December 2024.
Li, Jingxian, Andrew J. Jalbert, Sangyong Lee, Leah S. Simakas, Noah J. Geisler, Virgil J. Watkins, Laszlo A. Cline, Elliot J. Fuller, A. Alec Talin, and Yiyang Li. “Nonvolatile electrochemical memory at 600° C enabled by composition phase separation.” Device (2024).
Leave a Reply