A new technical paper titled “Polycrystalline silicon PhC cavities for CMOS on-chip integration” was published by researchers at Tyndall National Institute, Munster Technological University, and Université Grenoble Alpes, CEA, LETI.
“In this work, we present an on-chip 2D and 3D photonics integration solution compatible with Front End of Line integration (FEOL) using deposited polycrystalline silicon (poly:Si) for optical interconnects applications. Deposited silicon integration on a bulk silicon wafer is here discussed in all its processing steps and configurations. Moreover, results of deposited silicon high-Q Photonic Crystal (PhC) resonators are shown, demonstrating the possibility to employ optical resonators patterned on this material in the next generation of 2D and 3D integrated optical interconnects,” states the paper.
Find the open access technical paper here.. Published October 2022.
Iadanza, S., Devarapu, G.C.R., Blake, A. et al. Polycrystalline silicon PhC cavities for CMOS on-chip integration. Sci Rep 12, 17097 (2022). https://doi.org/10.1038/s41598-022-21578-6. Rights & permissions here.
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