Spin–Orbit Qubit With A Single Hole Electrostatically Confined In A Natural Silicon Metal-Oxide-Semiconductor Device


A new technical paper titled “A single hole spin with enhanced coherence in natural silicon” was published by researchers at Université Grenoble Alpes, CEA, LETI, and CNRS.

“Semiconductor spin qubits based on spin–orbit states are responsive to electric field excitations, allowing for practical, fast and potentially scalable qubit control. Spin electric susceptibility, however, renders these qubits generally vulnerable to electrical noise, which limits their coherence time. Here we report on a spin–orbit qubit consisting of a single hole electrostatically confined in a natural silicon metal-oxide-semiconductor device. By varying the magnetic field orientation, we reveal the existence of operation sweet spots where the impact of charge noise is minimized while preserving an efficient electric-dipole spin control. We correspondingly observe an extension of the Hahn-echo coherence time up to 88 μs, exceeding by an order of magnitude existing values reported for hole spin qubits, and approaching the state-of-the-art for electron spin qubits with synthetic spin–orbit coupling in isotopically purified silicon. Our finding enhances the prospects of silicon-based hole spin qubits for scalable quantum information processing.”

Find the technical paper here. Published September 2022.

Piot, N., Brun, B., Schmitt, V. et al. A single hole spin with enhanced coherence in natural silicon. Nat. Nanotechnol. (2022). https://doi.org/10.1038/s41565-022-01196-z.
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