tag: 2D materials

Design of strongly nonlinear graphene nanoelectromechanical systems in quantum regime
By Technical Paper Link - 10 Jan, 2022 - Comments: 0

ABSTRACT "We report on the analysis and design of atomically thin graphene resonant nanoelectromechanical systems (NEMS) that can be engineered to exhibit anharmonicity in the quantum regime. Analysis of graphene two-dimensional (2D) NEMS resonators suggests that with device lateral size scaled down to ∼10–30 nm, restoring force due to the third-order (Duffing) stiffness in graphene NE... » read more

Identification of two-dimensional layered dielectrics from first principles
By Technical Paper Link - 20 Dec, 2021 - Comments: 0

Abstract "To realize effective van der Waals (vdW) transistors, vdW dielectrics are needed in addition to vdW channel materials. We study the dielectric properties of 32 exfoliable vdW materials using first principles methods. We calculate the static and optical dielectric constants and discover a large out-of-plane permittivity in GeClF, PbClF, LaOBr, and LaOCl, while the in-plane permittiv... » read more

Transition-Metal Nitride Halide Dielectrics for Transition-Metal Dichalcogenide Transistors
By Technical Paper Link - 20 Dec, 2021 - Comments: 0

Abstract "Using first-principles calculations, we investigate six transition-metal nitride halides (TMNHs): HfNBr, HfNCl, TiNBr, TiNCl, ZrNBr, and ZrNCl as potential van der Waals (vdW) dielectrics for transition metal dichalcogenide (TMD) channel transistors. We calculate the exfoliation energies and bulk phonon energies and find that the six TMNHs are exfoliable and thermodynamically stabl... » read more

The development of integrated circuits based on two-dimensional materials
By Technical Paper Link - 23 Nov, 2021 - Comments: 0

Abstract Two-dimensional (2D) materials could potentially be used to develop advanced monolithic integrated circuits. However, despite impressive demonstrations of single devices and simple circuits—in some cases with performance superior to those of silicon-based circuits—reports on the fabrication of integrated circuits using 2D materials are limited and the creation of large-scale circu... » read more

What’s Next For Transistors And Chiplets
By Mark LaPedus - 21 Oct, 2021 - Comments: 5

Sri Samavedam, senior vice president of CMOS Technologies at Imec, sat down with Semiconductor Engineering to talk about finFET scaling, gate-all-around transistors, interconnects, packaging, chiplets and 3D SoCs. What follows are excerpts of that discussion. SE: The semiconductor technology roadmap is moving in several different directions. We have traditional logic scaling, but packaging i... » read more

MXene-GaN van der Waals metal-semiconductor junctions for high performance multiple quantum well photodetectors
By Technical Paper Link - 12 Oct, 2021 - Comments: 0

Abstract: "A MXene-GaN-MXene based multiple quantum well photodetector was prepared on patterned sapphire substrate by facile drop casting. The use of MXene electrodes improves the responsivity and reduces dark current, compared with traditional Metal-Semiconductor-Metal (MSM) photodetectors using Cr/Au electrodes. Dark current of the device using MXene-GaN van der Waals junctions is reduced b... » read more

Nudging 2D semiconductors forward
By Katherine Derbyshire - 16 Sep, 2021 - Comments: 1

The buzz about 2D materials replacing silicon appears to be premature. While 2D semiconductors have emerged as potential successors, it's not clear when or even if that will happen. As Iuliana Radu, Imec's director of quantum and exploratory computing observed, the “end” of silicon has been predicted many times before. It is not clear when 2D semiconductors will need to be ready. In fac... » read more

2D materials–based homogeneous transistor-memory architecture for neuromorphic hardware
By Technical Paper Link - 21 Aug, 2021 - Comments: 0

Abstract "In neuromorphic hardware, peripheral circuits and memories based on heterogeneous devices are generally physically separated. Thus exploring homogeneous devices for these components is an important issue for improving module integration and resistance matching. Inspired by ferroelectric proximity effect on two-dimensional materials, we present a tungsten diselenide-on-LiNbO3 cascaded... » read more

Thinner Channels With 2D Semiconductors
By Katherine Derbyshire - 21 Jun, 2021 - Comments: 0

Moving to future nodes will require more than just smaller features. At 3/2nm and beyond, new materials are likely to be added, but which ones and exactly when will depend upon an explosion of material science research underway at universities and companies around the globe. With field-effect transistors, a voltage applied to the gate creates an electric field in the channel, bending the ban... » read more

Graphene and two-dimensional materials for silicon technology
By Technical Paper Link - 02 Oct, 2020 - Comments: 1

Abstract: "The development of silicon semiconductor technology has produced breakthroughs in electronics—from the microprocessor in the late 1960s to early 1970s, to automation, computers and smartphones—by downscaling the physical size of devices and wires to the nanometre regime. Now, graphene and related two-dimensional (2D) materials offer prospects of unprecedented advances in device ... » read more

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