tag: 2D materials

2D materials for future heterogeneous electronics
By Technical Paper Link - 16 Mar, 2022 - Comments: 0

Abstract "Graphene and two-dimensional materials (2DM) remain an active field of research in science and engineering over 15 years after the first reports of 2DM. The vast amount of available data and the high performance of device demonstrators leave little doubt about the potential of 2DM for applications in electronics, photonics and sensing. So where are the integrated chips and enabled ... » read more

Pinpointing the Dominant Component of Contact Resistance to Atomically Thin Semiconductors
By Technical Paper Link - 08 Mar, 2022 - Comments: 0

Abstract "Achieving good electrical contacts is one of the major challenges in realizing devices based on atomically thin two-dimensional (2D) semiconductors. Several studies have examined this hurdle, but a universal understanding of the contact resistance and an underlying approach to its reduction are currently lacking. In this work we expose the shortcomings of the classical contact resist... » read more

Zero-Bias Power-Detector Circuits based on MoS2 Field-Effect Transistors on Wafer-Scale Flexible Substrates
By Technical Paper Link - 08 Mar, 2022 - Comments: 0

Abstract: "We demonstrate the design, fabrication, and characterization of wafer-scale, zero-bias power detectors based on two-dimensional MoS2 field effect transistors (FETs). The MoS2 FETs are fabricated using a wafer-scale process on 8 μm thick polyimide film, which in principle serves as flexible substrate. The performances of two CVD-MoS2 sheets, grown with different processes and showi... » read more

Interfacial ferroelectricity in marginally twisted 2D semiconductors
By Technical Paper Link - 08 Mar, 2022 - Comments: 0

Abstract "Twisted heterostructures of two-dimensional crystals offer almost unlimited scope for the design of new metamaterials. Here we demonstrate a room temperature ferroelectric semiconductor that is assembled using mono- or few-layer MoS2. These van der Waals heterostructures feature broken inversion symmetry, which, together with the asymmetry of atomic arrangement at the interface of tw... » read more

2D Semiconductors Make Progress, But Slowly
By Katherine Derbyshire - 28 Feb, 2022 - Comments: 2

Researchers are looking at a variety of new materials at future nodes, but progress remains slow. In recent years, 2D semiconductors have emerged as a leading potential solution to the problem of channel control in highly scaled transistors. As devices shrink, the channel thickness should shrink proportionally. Otherwise, the gate capacitance won’t be large enough to control the flow of cu... » read more

Hybrid architecture based on two-dimensional memristor crossbar array and CMOS integrated circuit for edge computing
By Technical Paper Link - 27 Jan, 2022 - Comments: 0

Abstract "The fabrication of integrated circuits (ICs) employing two-dimensional (2D) materials is a major goal of semiconductor industry for the next decade, as it may allow the extension of the Moore’s law, aids in in-memory computing and enables the fabrication of advanced devices beyond conventional complementary metal-oxide-semiconductor (CMOS) technology. However, most circuital demons... » read more

Design of strongly nonlinear graphene nanoelectromechanical systems in quantum regime
By Technical Paper Link - 10 Jan, 2022 - Comments: 0

ABSTRACT "We report on the analysis and design of atomically thin graphene resonant nanoelectromechanical systems (NEMS) that can be engineered to exhibit anharmonicity in the quantum regime. Analysis of graphene two-dimensional (2D) NEMS resonators suggests that with device lateral size scaled down to ∼10–30 nm, restoring force due to the third-order (Duffing) stiffness in graphene NE... » read more

Identification of two-dimensional layered dielectrics from first principles
By Technical Paper Link - 20 Dec, 2021 - Comments: 0

Abstract "To realize effective van der Waals (vdW) transistors, vdW dielectrics are needed in addition to vdW channel materials. We study the dielectric properties of 32 exfoliable vdW materials using first principles methods. We calculate the static and optical dielectric constants and discover a large out-of-plane permittivity in GeClF, PbClF, LaOBr, and LaOCl, while the in-plane permittiv... » read more

Transition-Metal Nitride Halide Dielectrics for Transition-Metal Dichalcogenide Transistors
By Technical Paper Link - 20 Dec, 2021 - Comments: 0

Abstract "Using first-principles calculations, we investigate six transition-metal nitride halides (TMNHs): HfNBr, HfNCl, TiNBr, TiNCl, ZrNBr, and ZrNCl as potential van der Waals (vdW) dielectrics for transition metal dichalcogenide (TMD) channel transistors. We calculate the exfoliation energies and bulk phonon energies and find that the six TMNHs are exfoliable and thermodynamically stabl... » read more

The development of integrated circuits based on two-dimensional materials
By Technical Paper Link - 23 Nov, 2021 - Comments: 0

Abstract Two-dimensional (2D) materials could potentially be used to develop advanced monolithic integrated circuits. However, despite impressive demonstrations of single devices and simple circuits—in some cases with performance superior to those of silicon-based circuits—reports on the fabrication of integrated circuits using 2D materials are limited and the creation of large-scale circu... » read more

← Older posts Newer posts →

  • Sponsors

About

Navigation

Connect With Us

Copyright ©2013-2026 SMG   |  Terms of Service  |  Privacy Policy