Reaching For The Reset Button In Lithography

By Mark LaPedus - 21 Mar, 2013 - Comments: 0

By Mark LaPedus Amid ongoing delays and setbacks, extreme ultraviolet (EUV) lithography and multi-beam e-beam have both missed the 10nm logic node. So for the present, chipmakers must take the brute force route at 10nm by using 193nm immersion with multiple patterning. Now, it’s time to hit the reset button. For the 7nm node, chipmakers currently are lining up the lithographic competition... » read more

Getting Ready For High-Mobility FinFETs

By Mark LaPedus - 21 Feb, 2013 - Comments: 0

By Mark LaPedus The IC industry entered the finFET era in 2011, when Intel leapfrogged the competition and rolled out the newfangled transistor technology at the 22nm node. Intel hopes to ramp up its second-generation finFET devices at 14nm by year’s end, with plans to debut its 11nm technology by 2015. Hoping to close the gap with Intel, silicon foundries are accelerating their efforts t... » read more

Sprint To The Finish Line

By Ed Sperling - 14 Feb, 2013 - Comments: 0

By Ed Sperling Low-Power/High-Performance Engineering sat down to discuss future challenges, pain points, and how the supply chain is being reconfigured with Chi-Ping Hsu, senior vice president for R&D in the Silicon Realization Group at Cadence. What follows are excerpts of that conversation. LPHP: Has the move to 20nm processes with 14nm finFETs progressed as smoothly as everyone hop... » read more

What Will Replace Dual Damascene?

By Mark LaPedus - 24 Jan, 2013 - Comments: 0

By Mark LaPedus In the mid-1990s, IBM announced the world’s first devices using a copper dual damascene process. At the time, the dual damascene manufacturing process was hailed as a major breakthrough. The new copper process enabled IC makers to scale the tiny interconnects in a device, as the previous material, aluminum, faced some major limitations. Dual damascene remains the workhorse... » read more

Beam Me Up

By Ed Sperling - 18 Oct, 2012 - Comments: 0

By Mark LaPedus For years, electron-beam tools have been struggling to keep up with photomask complexity, causing an alarming increase in write times and mask production costs. Intel and others recently warned that e-beams soon could reach their fundamental limits, thereby requiring the need for new solutions. And in the multiple patterning era, mask makers could see their capital costs soa... » read more

Deep Inside Intel

By Ed Sperling - 18 Oct, 2012 - Comments: 0

By Ed Sperling Semiconductor Manufacturing & Design sat down with Mark Bohr, senior fellow at Intel, to talk about a wide range of manufacturing and design issues Intel is wrestling with at advanced nodes—and just how far the road map now extends. SMD: Will EUV make 10nm? And if it doesn’t, what effect will that have on Intel? Bohr: For a process module as critical as lithography... » read more

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tag: 7nm

Reaching For The Reset Button In Lithography

Getting Ready For High-Mobility FinFETs

Sprint To The Finish Line

What Will Replace Dual Damascene?

Beam Me Up

Deep Inside Intel

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