Week In Review: Manufacturing, Test


Government policy President Biden has rolled out a proposal to boost the infrastructure in the U.S. As part of the plan, the president is calling on Congress to invest $50 billion in U.S. semiconductor manufacturing and research. The proposal must pass Congress, which isn’t going to be easy. “The President’s plan would invest ambitiously in U.S. semiconductor workers, manufacturing, and ... » read more

What Goes Wrong In Advanced Packages


Advanced packaging may be the best way forward for massive improvements in performance, lower power, and different form factors, but it adds a whole new set of issues that were much better understood when Moore's Law and the ITRS roadmap created a semi-standardized path forward for the chip industry. Different advanced packaging options — system-in-package, fan-outs, 2.5D, 3D-IC — have a... » read more

EUV Pellicles Finally Ready


After a period of delays, EUV pellicles are emerging and becoming a requirement in high-volume production of critical chips. At the same time, the pellicle landscape for extreme ultraviolet (EUV) lithography is changing. ASML, the sole supplier of EUV pellicles, is transferring the assembly and distribution of these products to Mitsui. Others are also developing pellicles for EUV, a next-gen... » read more

Week In Review: Auto, Security, Pervasive Computing


Security Infineon announced it has a Trusted Platform Module (TPM 2.0), called OPTIGA TPM 2.0, used to secure remote software updates, disc encryption, and user authentication on Linux-based systems. OPTIGA is an open software stack for securing comprehensive TSS* host software implementing the latest FAPI standard. Infineon developed the open-source software with Intel Corporation and Fraunho... » read more

Defect Mitigation And Characterization In Silicon Hardmask Materials


From SPIE Digital Library: In this study, metal contaminants, liquid particle count and on-wafer defects of Si- HMs and filtration removal rates are monitored to determine the effect of filter type, pore size, media morphology, and cleanliness on filtration performance. 5-nm PTFE NTD2 filter having proprietary surface treatment used in this study shows lowest defect count. Authors: Vineet... » read more

Hunting For Open Defects In Advanced Packages


Catching all defects in chip packaging is becoming more difficult, requiring a mix of electrical tests, metrology screening, and various types of inspection. And the more critical the application for these chips, the greater the effort and the cost. Latent open defects continue to be the bane of test, quality, and reliability engineering. Open defects in packages occur at the chip-to-substra... » read more

Week In Review: Manufacturing, Test


Government policy The National Security Commission on Artificial Intelligence (NSCAI) this week submitted its final report to Congress and the President. The goal is to develop a national strategy to maintain America’s AI advantages related to national security. As part of the long and complex report, the NSCAI came to a sobering conclusion: “The U.S. government is not prepared to defend t... » read more

Week In Review: Auto, Security, Pervasive Computing


Automotive/Mobility Chip-telemetry company proteanTecs has joined TSMC’s IP Alliance Program, which puts proteanTecs’ Universal Chip Telemetry (UCT) IP into TSMC’s catalog of production-proven IP. UCT is a monitoring system designed directly into chips to pull measurements from inside the chip throughout its lifecycle, including after placement in systems in the field. Monitoring the hea... » read more

Breaking The 2nm Barrier


Chipmakers continue to make advancements with transistor technologies at the latest process nodes, but the interconnects within these structures are struggling to keep pace. The chip industry is working on several technologies to solve the interconnect bottleneck, but many of those solutions are still in R&D and may not appear for some time — possibly not until 2nm, which is expected t... » read more

Marangoni Effect-Based Under-Layer For A Dual Damascene Via-First Approach


One of the main challenges of a Dual Damascene (DD) via-first process is the control of the Critical Dimensions (CDs) in the lithography of the trenches. The PhotoResist (PhR) thickness presents variations from the via arrays to the open areas, which cause the variation of CDs: the swing effect. The planarization of a DD via-first process is reported. A dual-layer solution is used to demonstrat... » read more

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