Inspection, Metrology Challenges Grow For SiC


Inspection and metrology are becoming more critical in the silicon carbide (SiC) industry amid a pressing need to find problematic defects in current and future SiC devices. Finding defects always has been a challenging task for SiC devices. But it’s becoming more imperative to find killer defects and reduce them as SiC device vendors begin to expand their production for the next wave of a... » read more

System Bits: June 4


Thin films for quantum computing Researchers at Los Alamos National Laboratory report their development of two-dimensional tungsten/selenium thin films that can control the emission of single photons, potentially useful in quantum technologies. “Efficiently controlling certain thin-film materials so they emit single photons at precise locations—what’s known as deterministic quantum em... » read more

Controlling Variability And Cost At 3nm And Beyond


Richard Gottscho, executive vice president and CTO of Lam Research, sat down with Semiconductor Engineering to talk about how to utilize more data from sensors in manufacturing equipment, the migration to new process nodes, and advancements in ALE and materials that could have a big impact on controlling costs. What follows are excerpts of that conversation. SE: As more sensors are added int... » read more

3D NAND Flash Wars Begin


3D NAND suppliers are gearing up for a new battle amid a period of price and competitive pressures, racing each other to the next technology generations. Competition is intensifying as a new player enters the 3D NAND market—China’s Yangtze Memory Technologies Co. (YMTC). Backed by billions of dollars in funding from the Chinese government, YMTC recently introduced its first 3D NAND techn... » read more

NAND Market Hits Speed Bump


Demand for NAND flash memory remains robust due to the onslaught of data in systems, but the overall NAND flash market is stuck in the middle of a challenging period beset by product shortages, supply chain issues and a difficult technology transition. Intel, Micron, Samsung, SK Hynix and the Toshiba/Western Digital duo continue to ship traditional planar NAND in the market, but this technol... » read more

Interconnect Challenges Rising


Chipmakers are ramping up their 14nm finFET processes, with 10nm and 7nm slated to ship possibly later this year or next. At 10nm and beyond, IC vendors are determined to scale the two main parts of the [getkc id="185" kc_name="finFET"] structure—the transistor and interconnects. Generally, transistor scaling will remain challenging at advanced nodes. And on top of that, the interconnects ... » read more

The Trouble With MEMS


The advent of the Internet of Things will open up a slew of new opportunities for MEMS-based sensors, but chipmakers are proceeding cautiously. There are a number of reasons for that restraint. Microelectromechanical systems are difficult to design, manufacture and test, which initially fueled optimism in the MEMS ecosystem that this market would command the same kinds of premiums that analo... » read more

How To Make 3D NAND


In 2013, Samsung reached a major milestone in the IC industry by shipping the world’s first 3D NAND device. Now, after some delays and uncertainty, Intel, Micron, SK Hynix and the SanDisk/Toshiba duo are finally ramping up or sampling 3D NAND. 3D NAND is the long-awaited successor to today’s planar or 2D NAND, which is used in memory cards, solid-state storage drives (SSDs), USB flash dr... » read more

ALD Market Heats Up


Amid the shift to 3D NAND, finFETs and other device architectures, the atomic layer deposition (ALD) market is heating up on several fronts. Applied Materials, for example, recently moved to shakeup the landscape by rolling out a new, high-throughput ALD tool. Generally, [getkc id="250" kc_name="ALD"] is a process that deposits materials layer-by-layer at the atomic level, enabling thin and ... » read more

It’s a Materials World, With Positive Forecast


By Michael Fury What’s the latest in materials forecasts for ALD/CVD precursors, CMP consumables, electronic gases, silicon wafers and sputtering targets? Techcet gives us an update. Metal Gate and Electrode Precursors to Double in Five Years Use of front-end Ta and W metal gate and Hf gate dielectric precursors will grow over 2.5x by 2020, according to a new report from Techcet, “20... » read more

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