tag: Chinese Academy of Sciences

Technical Paper Round-Up: July 5
By Linda Christensen - 05 Jul, 2022 - Comments: 0

New technical papers added to Semiconductor Engineering’s library this week. [table id=36 /] Semiconductor Engineering is in the process of building this library of research papers. Please send suggestions (via comments section below) for what else you’d like us to incorporate. If you have research papers you are trying to promote, we will review them to see if they are a good fit for... » read more

One Transistor Process-in-Memory Device Strategy w/ Multi-Functional Multi-Gate One-transistor (MGT) Design of Multiple Electrodes
By Technical Paper Link - 04 Jul, 2022 - Comments: 0

New technical paper titled "Multi-functional multi-gate one-transistor process-in-memory electronics with foundry processing and footprint reduction" from researchers at Ningbo Institute of Materials Technology and Engineering (Chinese Academy of Sciences), Center of Materials Science and Optoelectronics Engineering (University of Chinese Academy of Sciences), Shanghai Institute of Microsystem ... » read more

Research Bits: May 31
By Jesse Allen - 31 May, 2022 - Comments: 0

Carbon nanotube transistors Researchers from the National Institute for Materials Science, National University of Science and Technology, Emanuel Institute of Biochemical Physics, Chinese Academy of Sciences, National Institute of Advanced Industrial Science and Technology, University of Tokyo, Tianjin University, and Queensland University of Technology created transistors out of carbon nanotu... » read more

Research Bits: April 19
By Jesse Allen - 19 Apr, 2022 - Comments: 0

Processor power prediction Researchers from Duke University, Arm Research, and Texas A&M University developed an AI method for predicting the power consumption of a processor, returning results more than a trillion times per second while consuming very little power itself. “This is an intensively studied problem that has traditionally relied on extra circuitry to address,” said Zhiy... » read more

Manufacturing Bits: Jan. 3
By Mark LaPedus - 03 Jan, 2022 - Comments: 1

Gallium oxide chips Looking to commercialize a promising ultra wide-bandgap technology in the market, Novel Crystal Technology (NCT) has developed a Schottky barrier diode based on a material called gallium oxide. NCT devised an ampere-class 1,200-V diode based on gallium oxide. A diode is a device that passes electricity in one direction and blocks it in the opposite direction. Still in R&... » read more

Manufacturing Bits: Oct. 19
By Mark LaPedus - 19 Oct, 2021 - Comments: 0

Solar mini-reactors The University of Amsterdam has developed a standalone solar-powered mini-reactor. The technology could one day serve as an autonomous off-grid photochemistry system for remote locations. The prototype solar reactor measures 0.25 square meters. The system is equipped with a solar cell, which provides the power for the pumps and control system. This solar cell is placed ... » read more

Manufacturing Bits: Aug. 31
By Mark LaPedus - 31 Aug, 2021 - Comments: 0

X-ray nanotomography The U.S. Department of Energy’s (DOE) Argonne National Laboratory has developed a new method for improving the resolution of hard X-ray nanotomography. In general, tomography involves a system, which takes images or cross sections of a sample using X-rays or ultrasound. The images are then re-created in the form of a 3D model. One common form is called micro-comput... » read more

Four-Period Vertically Stacked SiGe/Si Channel FinFET Fabrication and Its Electrical Characteristics
By Technical Paper Link - 28 Aug, 2021 - Comments: 0

Li Y, Zhao F, Cheng X, Liu H, Zan Y, Li J, Zhang Q, Wu Z, Luo J, Wang W. Four-Period Vertically Stacked SiGe/Si Channel FinFET Fabrication and Its Electrical Characteristics. Nanomaterials (Basel). 2021 Jun 28;11(7):1689. doi: 10.3390/nano11071689. PMID: 34203194; PMCID: PMC8307669. Find technical paper here. Abstract "In this paper, to solve the epitaxial thickness limit and the high in... » read more

Manufacturing Bits: June 22
By Mark LaPedus - 22 Jun, 2021 - Comments: 1

5G metasurface antennas At the recent 2021 IEEE 71st Electronic Components and Technology Conference (ECTC), the Institute of Microelectronics of the Chinese Academy of Sciences (CAS) presented a paper on a low-profile broadband metasurface antenna for 5G antenna-in-package applications. The National Center for Advanced Packaging and the University of Chinese Academy of Sciences also contri... » read more

A Novel PUF Using Stochastic Short-Term Memory Time of Oxide-Based RRAM for Embedded Applications
By Technical Paper Link - 31 Mar, 2021 - Comments: 0

Abstract: "RRAM suffers from poor retention with short-term memory time when using low compliance current for programing. However, the short-term memory time exhibits ideal randomness, which can be exploited as an entropy source for physically unclonable function (PUF). In this work, we demonstrated a novel PUF utilizing the stochastic short-term memory time of oxide-based RRAM. The proposed P... » read more

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