AFM-Based Protocol for Characterizing the Incipient Stages of Plasticity on Hybrid Bonding-Ready Copper Pads (NIST, Intel, Colorado School of Mines)


A new technical paper titled "Probing the Nanoscale Onset of Plasticity in Electroplated Copper for Hybrid Bonding Structures via Multimodal Atomic Force Microscopy" was published by researchers at the National Institute of Standards and Technology, Intel, and Colorado School of Mines. Excerpt  "The slowdown of Moore’s law has elicited a paradigm shift whereby shrinking of in-plane dim... » read more

3DICs: Atomic-Scale Behavior of Electromigration in Cu−Cu Joints (NYCU, ITRI)


A new technical paper titled "In Situ Atomic-Scale Investigation of Electromigration Behavior in Cu–Cu Joints at High Current Density" was published by researchers at National Yang Ming Chiao Tung University (NYCU) and the Industrial Technology Research Institute (ITRI). Excerpt "Electromigration (EM) poses significant challenges to the reliability of miniaturized devices, particularly th... » read more

Ruthenium Interconnects On Tap


Chipmakers' focus on new interconnect technology is ramping up as copper's effectiveness continues to diminish, setting the stage for a significant shift that could improve performance and reduce heat at future nodes and in advanced packages. The introduction of copper interconnects in 1997 upended the then-standard tungsten via/aluminum line metallization scheme. Dual damascene integration ... » read more

Interconnects: Criteria For Alternative Metal Benchmarking And Selection (Imec, KU Leuven)


A technical paper titled “Selecting Alternative Metals for Advanced Interconnects” was published by researchers at imec and KU Leuven. Abstract “Today, interconnect resistance and reliability are key limiters for the performance of advanced CMOS circuits. As transistor scaling is slowing, interconnect scaling has become the main driver for circuit miniaturization, and interconnect lim... » read more

Wirebonding Is Here To Stay


Few technologies in semiconductor manufacturing have stood the test of time as steadfastly as wirebonding. This process, which involves electrically connecting semiconductor devices to their packages, has been a cornerstone of the electronics industry since the beginning of the electronics industry. Like everything else in the semiconductor market, wirebonding technologies have changed over ... » read more

Wafer Scale Transfer of 2D Materials, Graphene


A new technical paper titled "Assessment of Wafer-Level Transfer Techniques of Graphene with Respect to Semiconductor Industry Requirements" was published by researchers at Infineon Technologies AG, RWTH Aachen University, Protemics, and Advantest. Abstract "Graphene is a promising candidate for future electronic applications. Manufacturing graphene-based electronic devices typically requ... » read more

How Far Will Copper Interconnects Scale?


As leading chipmakers continue to scale finFETs — and soon nanosheet transistors — to ever-tighter pitches, the smallest metal lines eventually will become untenable using copper with its liner and barrier metals. What comes next, and when, is still to be determined. There are multiple options being explored, each with its own set of tradeoffs. Ever since IBM introduced the industry to c... » read more

Cu/SiO₂ Hybrid Bond Interconnects


Technical paper titled "Microstructure Development of Cu/SiO₂ Hybrid Bond Interconnects After Reliability Tests" from researchers at TU Dresden and others. Abstract: "The focus of this study is a detailed characterization of hybrid Cu/SiO 2 wafer-to-wafer bonding interconnects after reliability testing. Hybrid bonding (or direct bond interconnect) is a technology of choice for fine pitch... » read more

Investigation of integrated factors in the occurrence of copper wire bonding corrosion of semiconductor packages


Abstract "Copper wire bonding has got attracted attention over gold wire bonding due to its lower cost. However, despite many unique aspects and properties of copper wire bonding, corrosion of copper wire bonding has become a point of interest as it leads to the failure of semiconductor packages. Current and future trends and development in miniaturization and multifunction of the semico... » read more

Flat-surface-assisted and self-regulated oxidation resistance of Cu(111)


Abstract "Oxidation can deteriorate the properties of copper that are critical for its use, particularly in the semiconductor industry and electro-optics applications. This has prompted numerous studies exploring copper oxidation and possible passivation strategies. In situ observations have, for example, shown that oxidation involves stepped surfaces: Cu2O growth occurs on flat surfaces as a ... » read more

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