Controlling Variability Using Semiconductor Process Window Optimization


To ensure success in semiconductor technology development, process engineers must set the allowed ranges for wafer process parameters. Variability must be controlled, so that final fabricated devices meet required specifications. These specifications include critical dimensions, electrical performance requirements, and other device characteristics. Pre-production or ramp-up production Si wa... » read more

Advanced Process Control


David Fried, vice president of computational products at Lam Research, looks at shrinking tolerances at advanced processes, how that affects variation in semiconductor manufacturing, and what can be done to achieve the benefits of scaling without moving to new transistor architectures. » read more

New Advancements in Using Statistical Models as Part of a Standard MEMS Design Flow


This paper presents the benefits of using statistical models during MEMS design, through the virtual reproduction of a test structure for measuring a beam’s pull-in voltage. This electrical measurement is used as a functional indicator of the process quality for manufactured wafers. Statistical variations of process parameters (material properties, silicon thickness, sidewall angle and edge s... » read more

Challenges And Solutions For Silicon Wafer Bevel Defects During 3D NAND Flash Manufacturing


As semiconductor technology scales down in size, process integration complexity and defects are increasing in 3D NAND flash, partially due to larger stack deposits and thickness variability between the wafer center and the wafer edge. Industry participants are working to reduce defect density at the wafer edge to improve overall wafer yield. Attention has focused on common wafer bevel defects s... » read more

3D NAND Race Faces Huge Tech And Cost Challenges


Amid the ongoing memory downturn, 3D NAND suppliers continue to race each other to the next technology generations with several challenges and a possible shakeout ahead. Micron, Samsung, SK Hynix and the Toshiba-Western Digital duo are developing 3D NAND products at the next nodes on the roadmap, but the status of two others, Intel and China’s Yangtze Memory Technologies Co. (YMTC), is les... » read more

Blog Review: April 24


Rambus' Steven Woo checks out changes in the hardware used for neural network training and the importance of co-design of hardware and software. Cadence's Meera Collier makes an argument for why vehicle sensors watching the driver could prevent some distraction and fatigue-related crashes. Synopsys' Dan Lyon and Garrett Sipple point to some best practices for how to deal with a changing t... » read more

Controlling IC Manufacturing Processes For Yield


Equipment and tools vendors are starting to focus on data as a means of improving yield, adding more sensors and analysis capabilities into the manufacturing flow to circumvent problems in real time. How much this will impact the cost of developing complex chips at leading-edge nodes, and in 2.5D and 3D-IC packages, remains to be seen. But the race to both generate data during manufacturing ... » read more

Connecting Wafer-Level Parasitic Extraction And Netlisting


The semiconductor technology simulation world is typically divided into device-level TCAD (technology CAD) and circuit-level compact modeling. Larger EDA companies provide high-level design simulation tools that perform LVS (layout vs. schematic), DRC (design rule checking), and many other software solutions that facilitate the entire design process at the most advanced technology nodes. In thi... » read more

Self-aligned Fin Cut Last Patterning Scheme for Fin Arrays of 24nm Pitch and Beyond


In 5nm FinFET technology and beyond, SRAM cell size reduction to 6 tracks is required with a fin pitch of 24nm. Fin depopulation is mandatory to enable area scaling, but it becomes challenging at small pitches. In the first part of our study, we simulate a FinFET process flow with various fin cut approaches to obtain a 3D model of a FinFET SRAM device. Layout dependent effects on silicon and pr... » read more

Improving SAQP Patterning Yield Using Virtual Fabrication And Advanced Process Control


Advanced logic scaling has created some difficult technical challenges, including a requirement for highly dense patterning. Imec recently confronted this challenge, by working toward the use of Metal 2 (M2) line patterning with a 16 nm half-pitch for their 7nm node (equivalent to a 5nm foundry node). Self-Aligned Quadruple Patterning (SAQP) was investigated as an alternative path to Extreme Ul... » read more

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