tag: Coventor

Creating Airgaps To Reduce Parasitic Capacitance In FEOL
By Sumant Sarkar - 17 Nov, 2022 - Comments: 0

Reducing the parasitic capacitance between the gate metal and the source/drain contact of a transistor can decrease device switching delays. One way to reduce parasitic capacitance is to reduce the effective dielectric constant of the material layers between the gate and source/drain. This can be done by creating airgaps in the dielectric material at that location. This type of work has been do... » read more

Blog Review: Nov. 16
By Jesse Allen - 16 Nov, 2022 - Comments: 0

Siemens EDA's Jake Wiltgen explains the difference between transient and permanent faults when designing to the ISO 26262 standard, including where they come from and key ways to protect against them. Synopsys' Vikas Gautam points to how the economics of designing large SoCs is driving chiplet-based designs and the need for die-to-die standards such as UCIe, along with the key protocol verif... » read more

Blog Review: Nov. 9
By Jesse Allen - 09 Nov, 2022 - Comments: 0

Cadence's Claire Ying finds that the latest update to CXL, which introduced memory-centric fabric architectures and expanded capabilities for improving scale and optimizing resource utilization, could change how some of the world’s largest data centers and fastest supercomputers are built. Synopsys' Gervais Fong and Morten Christiansen examine the latest updates in the USB 80Gbps specifica... » read more

SiPs: The Best Things in Small Packages
By Laura Peters - 20 Oct, 2022 - Comments: 0

System-in-package (SiP) is quickly emerging as the package option of choice for a growing number of applications and markets, setting off a frenzy of activity around new materials, methodologies, and processes. SiP is an essential packaging platform that integrates multiple functionalities onto a single substrate, which enables lower system cost, design flexibility, and superior electrical p... » read more

Insights Into Advanced DRAM Capacitor Patterning: Process Window Evaluation Using Virtual Fabrication
By Qingpeng Wang - 20 Oct, 2022 - Comments: 0

With continuous device scaling, process windows have become narrower and narrower due to smaller feature sizes and greater process step variability [1]. A key task during the R&D stage of semiconductor development is to choose a good integration scheme with a relatively large process window. When wafer test data is limited, evaluating the process window for different integration schemes can... » read more

Blog Review: Oct. 5
By Jesse Allen - 05 Oct, 2022 - Comments: 0

Arm's Andrew Pickard chats with Georgia Tech's Azad Naeemi and Da Eun Shim about an effort to evaluate the benefit of new interconnect materials and wire geometry and determine their impacts at the microprocessor level. Synopsys' Shekhar Kapoor shares highlights from a recent panel exploring the promises, challenges, and realities of 3D IC technology, including the potential of 3D nanosystem... » read more

Blog Review: Sept. 28
By Jesse Allen - 28 Sep, 2022 - Comments: 0

Cadence's Paul McLellan shares more highlights from the recent Hot Chips, including some very large chips and accelerators for AI and deep learning, new networks and switches, and mobile and edge processors. Synopsys' Marc Serughetti considers the different use cases for digital twins in automotive and how they can help determine the impact of software on verification, test, and validation a... » read more

How Does Line Edge Roughness (LER) Affect Semiconductor Performance At Advanced Nodes?
By Yu De Chen - 26 Sep, 2022 - Comments: 0

BEOL metal line RC delay has become a dominant factor that limits chip performance at advanced nodes [1]. Smaller metal line pitches require a narrower line CD and line to line spacing, which introduces higher metal line resistance and line to line capacitance. This is demonstrated in figure 1, which displays a simulation of line resistance vs. line CD across different BEOL metals. Even without... » read more

How To Compare Chips
By Ed Sperling - 15 Sep, 2022 - Comments: 0

Traditional metrics for semiconductors are becoming much less meaningful in the most advanced designs. The number of transistors packed into a square centimeter only matters if they can be utilized, and performance per watt is irrelevant if sufficient power cannot be delivered to all of the transistors. The consensus across the chip industry is that the cost per transistor is rising at each ... » read more

A Study Of The Impact Of Line Edge Roughness On Metal Line Resistance Using Virtual Fabrication
By Coventor - 15 Sep, 2022 - Comments: 0

BEOL metal line RC delay has become a dominant factor limiting chip operation speeds at advanced nodes. This is because smaller metal line pitches require narrower line CD and line-to-line spacing, which introduces higher metal line resistance and line-to-line capacitance. A surface scattering effect is the root cause for the exponentially increased metal resistivity at smaller metal line pitch... » read more

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