tag: critical dimensions

CD Step Application in Edge Air Layer Structure Measurement for Bulk Acoustic Resonator
By Onto Innovation - 10 Mar, 2026 - Comments: 0

A vital component of modern communication systems, bulk acoustic wave resonators (BAW) function as filters, oscillators, and sensors. In a BAW device, the acoustic waves are confined within a specific region to achieve efficient resonance. The air ring structure, including the edge air layer structure, prevents acoustic energy from leaking. However, measuring the critical dimensions (CD) of edg... » read more

Overcoming BEOL Patterning Challenges At The 3nm Node
By Assawer Soussou - 20 Nov, 2025 - Comments: 0

As complementary metal-oxide semiconductor (CMOS) area shrinks 50% from one node to the next, interconnect critical dimensions (CD) and pitch (or spacing) are under tight demands. At the N3 node, where metal pitch dimensions must be at or below 18 nm,1,2 one of the main interconnect challenges is securing sufficient process margins for CD and edge placement error (EPE). Achieving the... » read more

Comprehensive Process Control Solutions For Through-Glass Vias
By Monita Pau - 12 Aug, 2025 - Comments: 0

At some point in our lives, we have dropped a drinking glass or knocked over a glass-blown knickknack, only to watch it hit the floor and shatter into pieces. We learn from any early age that glass is fragile. But if glass is so fragile, why are manufacturers adopting glass core substrates? Good question. And one that comes with a ready answer. Glass is able to meet the new, denser line-s... » read more

Metrology And Inspection For The Chiplet Era
By Gregory Haley - 06 Aug, 2024 - Comments: 0

New developments and innovations in metrology and inspection will enable chipmakers to identify and address defects faster and with greater accuracy than ever before, all of which will be required at future process nodes and in densely packed assemblies of chiplets. These advances will affect both front-end and back-end processes, providing increased precision and efficiency, combined with a... » read more

3D Metrology Meets Its Match In 3D Chips And Packages
By Laura Peters - 11 Jun, 2024 - Comments: 0

The pace of innovation in 3D device structures and packages is accelerating rapidly, driving the need for precise measurement and control of feature height to ensure these devices are reliable and perform as expected throughout their lifetimes. Expansion along the z axis is already well underway. One need look no further than the staircase-like 3D NAND stacks that rise like skyscrapers to p... » read more

Using OCD To Measure Trench Structures In SiC Power Devices
By Nick Keller - 08 Feb, 2024 - Comments: 0

You don’t have to be a dedicated follower of the transportation industry to know it is in the early stages of a significant transition, away from the rumbling internal combustion engine to the quiet days of electric vehicles. The signs of this transition are right there on the streets in the form of electric-powered buses, bikes and cars. The road to our electric future is before us, but we w... » read more

Strategies For Faster Yield Ramps On 5nm Chips
By Laura Peters - 12 Apr, 2022 - Comments: 0

Leading chipmakers TSMC and Samsung are producing 5nm devices in high volume production and TSMC is forging ahead with plans for first 3nm silicon by year end. But to meet such aggressive targets, engineers must identify defects and ramp yield faster than before. Getting a handle on EUV stochastic defects — non-repeating patterning defects such as microbridges, broken lines, or missing con... » read more

Marangoni Effect-Based Under-Layer For A Dual Damascene Via-First Approach
By Brewer Science - 19 Aug, 2021 - Comments: 0

One of the main challenges of a Dual Damascene (DD) via-first process is the control of the Critical Dimensions (CDs) in the lithography of the trenches. The PhotoResist (PhR) thickness presents variations from the via arrays to the open areas, which cause the variation of CDs: the swing effect. The planarization of a DD via-first process is reported. A dual-layer solution is used to demonst... » read more

Speeding Up The R&D Metrology Process
By Mark LaPedus - 16 Jul, 2020 - Comments: 0

Several chipmakers are making some major changes in the characterization/metrology lab, adding more fab-like processes in this group to help speed up chip development times. The characterization/metrology lab, which is generally under the radar, is a group that works with the R&D organization and the fab. The characterization lab is involved in the early analytical work for next-generati... » read more

Grading Chips For Longer Lifetimes
By Ed Sperling - 10 Mar, 2020 - Comments: 0

Figuring out how to grade chips is becoming much more difficult as these chips are used in applications where they are supposed to last for decades rather than just a couple of years. During manufacturing, semiconductors typically are run through a battery of tests involving performance and power, and then priced accordingly. But that is no longer a straightforward process for several reason... » read more

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