tag: design-technology co-optimization

3D Stacked Device Architecture Enabled By BEOL-Compatible Transistors (Stanford et al.)
By Technical Paper Link - 26 Feb, 2025 - Comments: 0

A new technical paper titled "Omni 3D: BEOL-Compatible 3-D Logic With Omnipresent Power, Signal, and Clock" was published by researchers at Stanford University, Intel Corporation and Carnegie Mellon University. Abstract "This article presents Omni 3D—a 3-D-stacked device architecture that is naturally enabled by back-end-of-line (BEOL)-compatible transistors. Omni 3D interleaves metal lay... » read more

What Is TCAD And Why It Is Essential For The Semiconductor Industry
By Shela Aboud - 16 Nov, 2023 - Comments: 0

Modern technology computer-aided design (TCAD) technologies have been around now for years. Yet, many semiconductor engineers still run experiments directly on wafers to examine chip fabrication processes and device operation. While it can be challenging to become proficient in TCAD, conducting experiments on wafers isn’t exactly easy, nor is it quick or cost-effective to do. As with so ma... » read more

IEDM: Backside Power Delivery
By Paul McLellan - 09 Mar, 2023 - Comments: 0

One part of the short course that I attended at IEDM in December was about backside power delivery networks. It was presented by Gaspard Hiblot of imec and titled "Process Architectures Changes to Improve Power Delivery." The presentation is co-credited with Geert Hellings and Julien Ryckaert. I should preface this post with the fact that this presentation was 80 slides long and so I will only... » read more

Beyond 5nm: Review of Buried Power Rails & Back-Side Power
By Technical Paper Link - 19 Aug, 2022 - Comments: 0

A new technical paper titled "A Holistic Evaluation of Buried Power Rails and Back-Side Power for Sub-5 nm Technology Nodes" is presented by researchers at UT Austin, Arm Research, and imec. Find the technical paper here. Published July 2022. S. S. T. Nibhanupudi et al., "A Holistic Evaluation of Buried Power Rails and Back-Side Power for Sub-5 nm Technology Nodes," in IEEE Transactions... » read more

Distilling The Essence Of Four DAC Keynotes
By Brian Bailey - 28 Jul, 2022 - Comments: 0

Chip design and verification are facing a growing number of challenges. How they will be solved — particularly with the addition of machine learning — is a major question for the EDA industry, and it was a common theme among four keynote speakers at this month's Design Automation Conference. DAC has returned as a live event, and this year's keynotes involved the leaders of a systems comp... » read more

Memory Evolution Drives Requirements For Design Technology Co-Optimization
By Ricardo Borges - 15 Jul, 2022 - Comments: 0

By Ricardo Borges and Anand Thiruvengadam As new technology nodes have become available, memory has been one of the most aggressive semiconductor applications to adopt advanced process technology. The relentless demand by users of electronic devices for more memory has ensured that investments in new nodes and processes would be quickly repaid by massive sales volumes. As each new node came ... » read more

Virtual Fabrication At 7/5/3nm
By Ed Sperling - 23 Oct, 2020 - Comments: 0

David Fried, vice president of computational products at Lam Research, digs into virtual fabrication at the most advanced nodes, how to create models using immature processes at new nodes, and how to fuse together data from multiple different silos. » read more

Influence Of SiGe On Parasitic Parameters in PMOS
By Coventor - 27 Sep, 2019 - Comments: 0

In this paper, simulation-based design-technology co-optimization (DTCO) is carried out using the Coventor SEMulator3D virtual fabrication platform with its integrated electrical analysis capabilities [1]. In our study, process modeling is used to predict the sensitivity of FinFET device performance to changes in a silicon germanium epitaxial process. The simulated process is a gate-last flow p... » read more

How FinFET Device Performance Is Affected By Epitaxial Process Variations
By Jacky Huang - 25 Sep, 2019 - Comments: 0

By Shih-Hao (Jacky) Huang and Yu De Chen As the need to scale transistors to ever-smaller sizes continues to press on technology designers, the impact of parasitic resistance and capacitance can approach or even outpace other aspects of transistor performance, such as fringing capacitance or source drain resistance. The total resistance in a device is comprised of two components: internal re... » read more

Advanced 3D Design Technology Co-Optimization For Manufacturability
By Yu De Chen - 30 Apr, 2018 - Comments: 0

By Yu De Chen, Jacky Huang, Dalong Zhao, Jiangjiang (Jimmy) Gu, and Joseph Ervin Yield and cost have always been critical factors for both manufacturers and designers of semiconductor products. It is a continuous challenge to meet targets of both yield and cost, due to new device structures and the increasing complexity of process innovations introduced to achieve improved product performanc... » read more

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