tag: design-technology co-optimization

Read-Centric DTCO for IGZO FeFETs 3D Heterogeneous AI memories (imec, KU Leuven)
By Technical Paper Link - 05 Jun, 2026 - Comments: 0

Researchers from imec and KU Leuven have published “DTCO of NOR-Type IGZO FeFETs for 3D Heterogeneous AI Memories: A Read-Centric Perspective”. Abstract excerpt “This work evaluates the viability of NOR-type IGZO FeFETs for 3D heterogeneous AI memories from a read-centric design-technology co-optimization (DTCO) perspective, spanning on-chip back-end-of-line (BEOL) RAMs an... » read more

Adding Cost, Cycle Time, And Carbon Footprint To PPA Design Targets
By Shela Aboud - 20 Nov, 2025 - Comments: 0

When engineers start designing a new semiconductor technology and fabrication process, they set targets to define what they are trying to achieve to meet the market demands and beat competitive offerings. Traditionally, they have used the metrics of power, performance, and area (PPA). This post examines how additional design targets are mandated by today’s deep submicron nodes and how develop... » read more

Cross-Node Scaling Potential of SOT-MRAM for Last-Level Caches (imec)
By Technical Paper Link - 02 Sep, 2025 - Comments: 0

A new technical paper titled "SOT-MRAM Bitcell Scaling with BEOL Read Selectors: A DTCO Study" was published by researchers at imec, Leuven, and 3001 Belgium. Abstract "This work explores the cross-node scaling potential of SOT-MRAM for last-level caches (LLCs) under heterogeneous system scaling paradigm. We perform extensive Design-Technology Co-Optimization (DTCO) exercises to evaluate th... » read more

Device Architecture For 2D Material-Based mNS-FETs In Sub-1nm Nodes (Sungkyunkwan Univ., Alsemy)
By Technical Paper Link - 24 Jun, 2025 - Comments: 0

A new technical paper titled "Exploring optimal TMDC multi-channel GAA-FET architectures at sub-1nm nodes" was published by researchers at Sungkyunkwan University and Alsemy Inc. "This paper explores the design and optimization of multi-Nanosheet Field-Effect Transistors (mNS-FETs) employing a Transition Metal Dichalcogenide (TMDC) channel, specifically MoS2, for the 0.7 nm technology node u... » read more

TCAD-Based AI Models For Modern Fab Workflows
By Saurabh Suryavanshi - 20 Mar, 2025 - Comments: 0

The relentless pace of semiconductor development continues unabated. Despite the slowdown in Moore’s law, feature sizes continue to shrink as new geometries come online. Constant innovations in both fab processes and device design offer new opportunities but present new challenges. As in so many other areas of electronics, artificial intelligence (AI) is starting to play a significant role. ... » read more

3D Stacked Device Architecture Enabled By BEOL-Compatible Transistors (Stanford et al.)
By Technical Paper Link - 26 Feb, 2025 - Comments: 0

A new technical paper titled "Omni 3D: BEOL-Compatible 3-D Logic With Omnipresent Power, Signal, and Clock" was published by researchers at Stanford University, Intel Corporation and Carnegie Mellon University. Abstract "This article presents Omni 3D—a 3-D-stacked device architecture that is naturally enabled by back-end-of-line (BEOL)-compatible transistors. Omni 3D interleaves metal lay... » read more

What Is TCAD And Why It Is Essential For The Semiconductor Industry
By Shela Aboud - 16 Nov, 2023 - Comments: 0

Modern technology computer-aided design (TCAD) technologies have been around now for years. Yet, many semiconductor engineers still run experiments directly on wafers to examine chip fabrication processes and device operation. While it can be challenging to become proficient in TCAD, conducting experiments on wafers isn’t exactly easy, nor is it quick or cost-effective to do. As with so ma... » read more

IEDM: Backside Power Delivery
By Paul McLellan - 09 Mar, 2023 - Comments: 0

One part of the short course that I attended at IEDM in December was about backside power delivery networks. It was presented by Gaspard Hiblot of imec and titled "Process Architectures Changes to Improve Power Delivery." The presentation is co-credited with Geert Hellings and Julien Ryckaert. I should preface this post with the fact that this presentation was 80 slides long and so I will only... » read more

Beyond 5nm: Review of Buried Power Rails & Back-Side Power
By Technical Paper Link - 19 Aug, 2022 - Comments: 0

A new technical paper titled "A Holistic Evaluation of Buried Power Rails and Back-Side Power for Sub-5 nm Technology Nodes" is presented by researchers at UT Austin, Arm Research, and imec. Find the technical paper here. Published July 2022. S. S. T. Nibhanupudi et al., "A Holistic Evaluation of Buried Power Rails and Back-Side Power for Sub-5 nm Technology Nodes," in IEEE Transactions... » read more

Distilling The Essence Of Four DAC Keynotes
By Brian Bailey - 28 Jul, 2022 - Comments: 0

Chip design and verification are facing a growing number of challenges. How they will be solved — particularly with the addition of machine learning — is a major question for the EDA industry, and it was a common theme among four keynote speakers at this month's Design Automation Conference. DAC has returned as a live event, and this year's keynotes involved the leaders of a systems comp... » read more

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