Influence Of SiGe On Parasitic Parameters in PMOS


In this paper, simulation-based design-technology co-optimization (DTCO) is carried out using the Coventor SEMulator3D virtual fabrication platform with its integrated electrical analysis capabilities [1]. In our study, process modeling is used to predict the sensitivity of FinFET device performance to changes in a silicon germanium epitaxial process. The simulated process is a gate-last flow p... » read more

How FinFET Device Performance Is Affected By Epitaxial Process Variations


By Shih-Hao (Jacky) Huang and Yu De Chen As the need to scale transistors to ever-smaller sizes continues to press on technology designers, the impact of parasitic resistance and capacitance can approach or even outpace other aspects of transistor performance, such as fringing capacitance or source drain resistance. The total resistance in a device is comprised of two components: internal re... » read more

Advanced 3D Design Technology Co-Optimization For Manufacturability


By Yu De Chen, Jacky Huang, Dalong Zhao, Jiangjiang (Jimmy) Gu, and Joseph Ervin Yield and cost have always been critical factors for both manufacturers and designers of semiconductor products. It is a continuous challenge to meet targets of both yield and cost, due to new device structures and the increasing complexity of process innovations introduced to achieve improved product performanc... » read more

What Goes Around Comes Around: Moore’s Law At 10nm And Beyond


Modified by Greg Yeric from original by Eric Fischer Gordon Moore penned his famous observation in an era when the people developing the process were also the people designing the circuits. Over time, things got more complicated and work specialization set in, but all was well in the world for many years as the fabs kept delivering on Moore’s Law. Yes, designers had to come up with lot... » read more