tag: DRAM

Will Fab Tool Boom Cycle Last?
By Mark LaPedus - 18 Dec, 2017 - Comments: 2

Fab equipment spending is on pace for a record year in 2017, and it now appears that momentum could continue into 2018. Fab tool vendors found themselves in the midst of an unexpected boom cycle in 2017, thanks to enormous demand for equipment in [getkc id="208" comment="3D NAND"] and, to a lesser degree, [getkc id="93" kc_name="DRAM"]. In the logic/foundry business, however, equipment deman... » read more

The Next 5 Years Of Chip Technology
By Ed Sperling - 18 Dec, 2017 - Comments: 0

Semiconductor Engineering sat down to discuss the future of scaling, the impact of variation, and the introduction of new materials and technologies, with Rick Gottscho, CTO of [getentity id="22820" comment="Lam Research"]; Mark Dougherty, vice president of advanced module engineering at [getentity id="22819" comment="GlobalFoundries"]; David Shortt, technical fellow at [getentity id="22876" co... » read more

Pushing DRAM’s Limits
By Kevin Fogarty - 14 Dec, 2017 - Comments: 1

If humans ever do create a genuinely self-aware artificial intelligence, it may well exhibit the frustration of waiting for data arrive. The access bandwidth of DRAM-based computer memory has improved by a factor of 20x over the past two decades. Capacity increased 128x during the same period. But latency improved only 1.3x, according to Kevin Chang, a researcher at Carnegie Mellon Universit... » read more

Shortages Hit Packaging Biz
By Mark LaPedus - 11 Dec, 2017 - Comments: 1

Rising demand for chips is hitting the IC packaging supply chain, causing shortages of select manufacturing capacity, various package types, leadframes and even some equipment. Spot shortages for some IC packages began showing up earlier this year, but the problem has been growing and spreading since then. Supply imbalances reached a boiling point in the third and fourth quarters of this yea... » read more

New Drivers For I/O
By Brian Bailey - 13 Nov, 2017 - Comments: 0

Interface standards are on a tear, and new markets are pushing the standards in several directions at the same time. The result could be a lot more innovation and some updates in areas that looked to be well established. Traditionally, this has been a sleepy and predictable part of the industry with standards bodies producing updates to their interfaces at a reasonable rate. Getting data int... » read more

Making high-capacity data caches more efficient
By Technical Paper Link - 24 Oct, 2017 - Comments: 4

Source: Researchers from MIT, Intel, and ETH Zurich Xiangyao Yu (MIT), Christopher J. Hughes (Intel), Nadathur Satish (Intel) Onur Mutlu (ETH Zurich), Srinivas Devadas (MIT) Technical Paper link MIT News article As the transistor counts in processors have gone up, the relatively slow connection between the processor and main memory has become the chief impediment to improving comp... » read more

Data Centers Turn To New Memories
By Ann Mutschler - 12 Oct, 2017 - Comments: 3

DRAM extensions and alternatives are starting to show up inside of data centers as the volume of data being processed, stored and accessed continues to skyrocket. This is having a big impact on the architecture of data centers, where the goal now is to move processing much closer to the data and to reduce latency everywhere. Memory has always been a key piece of the Von Neumann compute archi... » read more

What Happened To ReRAM?
By Mark LaPedus - 21 Sep, 2017 - Comments: 8

Resistive RAM (ReRAM), one of a handful of next-generation memories under development, is finally gaining traction after years of setbacks. Fujitsu and Panasonic are jointly ramping up a second-generation ReRAM device. In addition, Crossbar is sampling a 40nm ReRAM technology, which is being made on a foundry basis by China’s SMIC. And not to be outdone, TSMC and UMC recently put ReRAM on ... » read more

Four Foundries Back MRAM
By Mark LaPedus - 23 Aug, 2017 - Comments: 4

Four major foundries plan to offer MRAM as an embedded memory solution by this year or next, setting the stage for what finally could prove to be a game-changer for this next-generation memory technology. GlobalFoundries, Samsung, TSMC and UMC plan to start offering spin-transfer torque magnetoresistive RAM (ST-MRAM or STT-MRAM) as an alternative or a replacement to NOR flash, possibly start... » read more

What Is Spin Torque MRAM?
By Mark LaPedus - 17 Aug, 2017 - Comments: 0

The memory market is going in several different directions at once. On one front, the traditional memory types, such as DRAM and flash, remain the workhorse technologies. Then, several vendors are readying the next-generation memory types. As part of an ongoing series, Semiconductor Engineering will explore where the new and traditional memory technologies are heading. For this segment, P... » read more

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