How FinFET Device Performance Is Affected By Epitaxial Process Variations


By Shih-Hao (Jacky) Huang and Yu De Chen As the need to scale transistors to ever-smaller sizes continues to press on technology designers, the impact of parasitic resistance and capacitance can approach or even outpace other aspects of transistor performance, such as fringing capacitance or source drain resistance. The total resistance in a device is comprised of two components: internal re... » read more

Backside Power Delivery as a Scaling Knob for Future Systems


Standard cell track height scaling provides us with sufficient area scaling at the standard cell library level. The efficiency of this technique and the complexities involved with this scaling method have been discussed in detail. However, the area benefits of standard cell track height scaling diminish when we consider the complexities of incorporating on-chip power grid into the DTCO explorat... » read more

Variation Issues Grow Wider And Deeper


Variation is becoming more problematic as chips become increasingly heterogeneous and as they are used in new applications and different locations, sparking concerns about how to solve these issues and what the full impact will be. In the past, variation in semiconductors was considered a foundry issue, typically at the most advanced process node, and largely ignored by most companies. New p... » read more

Looking For The Next Big Innovation


Never has there been more demand for “The Big Innovation” — one that moves the needle for performance, power and area-cost (PPAC) in a big way — as there is in the current era of AI and machine learning (ML). As summarized in Why AI Workloads Require New Computing Architectures, AI workloads require new architectures to process data. These workloads also call for heterogeneous comp... » read more

Week In Review: Design, Low Power


Intel disclosed a speculative execution side-channel attack method called L1 Terminal Fault (L1TF). Leslie Culbertson, Intel's executive vice president and general manager of Product Assurance and Security, writes: "This method affects select microprocessor products supporting Intel Software Guard Extensions (Intel SGX) and was first reported to us by researchers at KU Leuven University, Techni... » read more

The Next 5 Years Of Chip Technology


Semiconductor Engineering sat down to discuss the future of scaling, the impact of variation, and the introduction of new materials and technologies, with Rick Gottscho, CTO of Lam Research; Mark Dougherty, vice president of advanced module engineering at GlobalFoundries; David Shortt, technical fellow at KLA-Tencor; Gary Zhang, vice president of computational litho products at ASML; and Shay... » read more

Litho Challenges Break The Design-Process Wall


The days when chip designers could throw tape “over the wall” to the manufacturing side are long gone. Over the last several technology generations, increasingly restrictive process kits have forced designers to accommodate their circuit structures to the manufacturing process. Lacking a successor to 193nm lithography, the industry has turned to increasingly complex resolution enhancemen... » read more

What Goes Around Comes Around: Moore’s Law At 10nm And Beyond


Modified by Greg Yeric from original by Eric Fischer Gordon Moore penned his famous observation in an era when the people developing the process were also the people designing the circuits. Over time, things got more complicated and work specialization set in, but all was well in the world for many years as the fabs kept delivering on Moore’s Law. Yes, designers had to come up with lot... » read more

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