tag: EUV

The Case For Chiplets
By Ed Sperling - 07 May, 2018 - Comments: 4

Discussion about chiplets is growing as the cost of developing chips at 10/7nm and beyond passes well beyond the capabilities of many chipmakers. Estimates for developing 5nm chips (the equivalent 3nm for TSMC and Samsung) are well into the hundreds of millions of dollars just for the NRE costs alone. Masks costs will be in the double-digit millions of dollars even with EUV. And that's assum... » read more

More Nodes, New Problems
By Ann Mutschler - 26 Apr, 2018 - Comments: 0

The rollout of leading-edge process nodes is accelerating rather than slowing down, defying predictions that device scaling would begin to subside due to rising costs and the increased difficulty of developing chips at those nodes. Costs are indeed rising. So are the number of design rules, which reflect skyrocketing complexity stemming from multiple patterning, more devices on a chip, and m... » read more

Next EUV Issue: Mask 3D Effects
By Mark LaPedus - 25 Apr, 2018 - Comments: 6

As extreme ultraviolet (EUV) lithography moves closer to production, the industry is paying more attention to a problematic phenomenon called mask 3D effects. Mask 3D effects involve the photomask for EUV. In simple terms, a chipmaker designs an IC, which is translated from a file format into a photomask. The mask is a master template for a given IC design. It is placed in a lithography scan... » read more

The Week In Review: Manufacturing
By Mark LaPedus - 20 Apr, 2018 - Comments: 2

Trade The trade tensions are building between the U.S. and China. In the latest move, the U.S. Department of Commerce has imposed a ban on U.S. companies selling chips to ZTE, a Chinese telecom equipment and mobile phone vendor. The ban has been implemented on ZTE for seven years after the firm “was caught illegally shipping U.S. goods to Iran,” according to a report from Reuters. This ... » read more

Design Rule Complexity Rising
By Ed Sperling - 19 Apr, 2018 - Comments: 0

Variation, edge placement error, and a variety of other issues at new process geometries are forcing chipmakers and EDA vendors to confront a growing volume of increasingly complex, and sometimes interconnected design rules to ensure chips are manufacturable. The number of rules has increased to the point where it's impossible to manually keep track of all of them, and that has led to new pr... » read more

Searching For EUV Defects
By Mark LaPedus - 19 Apr, 2018 - Comments: 1

Chipmakers hope to insert extreme ultraviolet (EUV) lithography at 7nm and/or 5nm, but several challenges need to be solved before this oft-delayed technology can be used in production. One lingering issue that is becoming more worrisome is how to find defects caused by [gettech id="31045" comment="EUV"] processes. These processes can cause random variations, also known as stochastic effects... » read more

More Lithography/Mask Challenges (Part 2)
By Mark LaPedus - 17 Apr, 2018 - Comments: 3

Semiconductor Engineering sat down to discuss lithography and photomask technologies with Gregory McIntyre, director of the Advanced Patterning Department at [getentity id="22217" e_name="Imec"]; Harry Levinson, senior fellow and senior director of technology research at [getentity id="22819" comment="GlobalFoundries"]; Regina Freed, managing director of patterning technology at [getentity id="... » read more

What Happened To Nanoimprint Litho?
By Mark LaPedus - 29 Mar, 2018 - Comments: 4

Nanoimprint lithography (NIL) is re-emerging amid an explosion of new applications in the market. Canon, EV Group, Nanonex, Suss and others continue to develop and ship NIL systems for a range of markets. NIL is different than conventional lithography and resembles a stamping process. Initially, a lithographic system forms a pattern on a template based on a pre-defined design. Then, a separa... » read more

Smaller, Faster, Cheaper—But Different
By Ed Sperling - 22 Mar, 2018 - Comments: 0

The old mantra of "smaller, faster, cheaper" has migrated from the chip level to the electronic system level, raising some interesting questions about where the real value is being generated. Smaller as it pertains to gate size, line widths and spaces, will continue in an almost straight line for at least the next decade. The ability to print three-dimensional features on a nanoscale using E... » read more

EUV’s New Problem Areas
By Mark LaPedus - 19 Mar, 2018 - Comments: 2

Extreme ultraviolet (EUV) lithography is moving closer to production, but problematic variations—also known as stochastic effects—are resurfacing and creating more challenges for the long-overdue technology. GlobalFoundries, Intel, Samsung and TSMC hope to insert [gettech id="31045" comment="EUV"] lithography into production at 7nm and/or 5nm. But as before, EUV consists of several compo... » read more

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