tag: ferroelectrics

HW-Based Image Generation Using FTJs (SNU, Sungkyunkwan U., SK hynix et al.)
By Technical Paper Link - 12 May, 2026 - Comments: 0

A new technical paper, "CMOS-compatible ferroelectric tunnel junctions integrate stochastic sampling and deterministic computing for image generation," was published by researchers at Seoul National University, Sungkyunkwan University, Hanyang University, Sogang University, and SK Hynix. Abstract "Recent progress in generative modeling has intensified the need for compact, energy-efficien... » read more

Research Bits: Feb. 24
By Jesse Allen - 24 Feb, 2026 - Comments: 0

Growing patterned diamond Researchers from Rice University developed a bottom-up microwave plasma chemical vapor deposition method for growing patterned diamond surfaces that could help decrease operating temperatures in electronics by 23 degrees Celsius. The team used two techniques for controlling seed crystal placement. Photolithography was used for small, detailed patterns. To scale up ... » read more

Research Bits: Jan. 12
By Jesse Allen - 12 Jan, 2026 - Comments: 0

Wafer-scale two-photon lithography Researchers from Lawrence Livermore National Laboratory (LLNL) and Stanford University demonstrated a two-photon lithography (TPL) platform for wafer-scale manufacturing. The TPL platform uses large arrays of metalenses to split a femtosecond laser into more than 120,000 coordinated focal spots that write simultaneously across centimeter-scale areas. The a... » read more

Research Bits: Jan. 6
By Jesse Allen - 06 Jan, 2026 - Comments: 0

Ultrathin ferroelectric capacitors Researchers from the Institute of Science Tokyo and Canon ANELVA Corporation built an ultrathin ferroelectric memory capacitor stack using scandium-substituted aluminum nitride ((Al,Sc)N) thin films with platinum electrodes. The total thickness is just 30nm: a 20nm ferroelectric layer sandwiched between 5nm platinum top and bottom electrodes. “Previous r... » read more

Research Bits: Dec. 2
By Jesse Allen - 02 Dec, 2025 - Comments: 0

Ionothermoelectric cooling Researchers from the University of Osaka, University of Tokyo, and Japan's National Institute of Advanced Industrial Science and Technology proposed an ionothermoelectric cooling strategy for chips that enhances cooling by driving the flow of ions through nanoscale channels. “We fabricated a nanosized pore in a semiconductor membrane and surrounded the nanopore ... » read more

Research Bits: Sept. 30
By Jesse Allen - 30 Sep, 2025 - Comments: 0

Hybrid memory for edge training and inference Researchers from CEA-Leti, Université Grenoble Alpes, CEA-List, the French National Centre for Scientific Research (CNRS), the University of Bordeaux, Bordeaux INP, IMS France, Université Paris-Saclay, and the Center for Nanosciences and Nanotechnologies developed a hybrid memory system that combines the traits of ferroelectric capacitors (FeCAP)... » read more

Research Bits: Sept. 2
By Jesse Allen - 02 Sep, 2025 - Comments: 0

Microwave neural network Researchers from Cornell University designed an on-chip microwave neural network that can perform real-time frequency domain computation for tasks like radio signal decoding, radar target tracking, and digital data processing. By using interconnected modes produced in tunable waveguides, the device can handle data streams in the tens of gigahertz while consuming less t... » read more

Research Bits: May 27
By Jesse Allen - 27 May, 2025 - Comments: 0

Tracking ferroelectric domain walls Researchers from Oak Ridge National Laboratory and National Cheng Kung University developed a technique called scanning oscillator piezoresponse force microscopy to observe how domain walls move in ferroelectric materials under rapidly fluctuating electric fields. “Domain walls can have completely different properties from the neighboring domains they s... » read more

Research Bits: Mar. 10
By Jesse Allen - 10 Mar, 2025 - Comments: 0

Incipient ferroelectricity Researchers from Penn State University and the University of Minnesota propose harnessing incipient ferroelectricity in multifunctional two-dimensional FETs to create neuromorphic computer memory. Materials with incipient ferroelectricity have no stable ferroelectric order at room temperature and need certain conditions to achieve an electrical charge. The FETs were ... » read more

Research Bits: Mar. 11
By Jesse Allen - 11 Mar, 2024 - Comments: 0

Ferroelectric nanosheets Engineers from the University of Sydney, RMIT University, University of New South Wales, and University of Technology Sydney created a liquid metal alloy of tin, zirconium, and hafnium. The alloy has a thin oxide layer crust that enables it to be used to harvest ultra-thin tin oxide nanosheets doped with hafnium zirconium oxide, which could then be 2D printed on a subs... » read more

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