Power/Performance Bits: Jan. 13


Ferroelectric memory Researchers at the Moscow Institute of Physics and Technology and North Carolina State University developed a ferroelectric memory cell and a method for measuring the electric potential distribution across a ferroelectric capacitor, an important aspect of creating new nonvolatile ferroelectric devices. The team's new ferroelectric memory cell is made from a 10nm thick z... » read more

Power/Performance Bits: Sept. 27


Self-organizing circuits Researchers studying the behavior of nanoscale materials at the Department of Energy's Oak Ridge National Laboratory discovered that due an unusual feature of certain complex oxides called phase separation, individual nanoscale regions can behave as self-organized circuit elements, which could support new multifunctional types of computing architectures. "Within a... » read more

Power/Performance Bits: April 19


Ferroelectric non-volatile memory Scientists from the Moscow Institute of Physics and Technology (MIPT), the University of Nebraska, and the University of Lausanne in Switzerland succeeded in growing ultra-thin (2.5-nanometer) ferroelectric films based on hafnium oxide that could potentially be used to develop non-volatile memory elements called ferroelectric tunnel junctions. The film was g... » read more