tag: FETs

Rapid Prototyping For Emerging Semiconductor Devices
By Technical Paper Link - 03 Jan, 2024 - Comments: 0

A technical paper titled “Generating Predictive Models for Emerging Semiconductor Devices” was published by researchers at TU Darmstadt and NaMLab. Abstract: "Circuit design requires fast and scalable models which are compatible to modern electronic design automation tools. For this task typically analytical compact models are preferred. However, for emerging device concepts with altered ... » read more

A Modelling Approach To Well-Known And Exotic 2D Materials For Next-Gen FETs
By Technical Paper Link - 31 Oct, 2023 - Comments: 0

A technical paper titled “Field-Effect Transistors based on 2-D Materials: a Modeling Perspective” was published by researchers at ETH Zurich. Abstract: "Two-dimensional (2D) materials are particularly attractive to build the channel of next-generation field-effect transistors (FETs) with gate lengths below 10-15 nm. Because the 2D technology has not yet reached the same level of maturity... » read more

Reporting and Benchmarking Process For A 2D Semiconductor FET
By Technical Paper Link - 29 Jul, 2022 - Comments: 0

New research paper titled "How to Report and Benchmark Emerging Field-Effect Transistors" was published from researchers at NIST, Purdue University, UCLA, Theiss Research, Peking University, NYU, Imec, RWTH Aachen, and others. "Emerging low-dimensional nanomaterials have been studied for decades in device applications as field-effect transistors (FETs). However, properly reporting and compar... » read more

FinFETs Give Way To Gate-All-Around
By Lam Research - 18 Nov, 2020 - Comments: 0

When they were first commercialized at the 22 nm node, finFETs represented a revolutionary change to the way we build transistors, the tiny switches in the “brains” of a chip. As compared to prior planar transistors, the fin, contacted on three sides by the gate, provides much better control of the channel formed within the fin. But, finFETs are already reaching the end of their utility as... » read more

Manufacturing Bits: Jan. 14
By Mark LaPedus - 14 Jan, 2014 - Comments: 0

MoS2 FETs Two-dimensional materials are gaining steam in the R&D labs. The 2D materials include graphene, boron nitride (BN) and the transition-metal dichalcogenides (TMDs). One TMD, molybdenum diselenide (MoS2), is an attractive material for use in future field-effect transistors (FETs). MoS2 has several properties, including a non-zero band gap, atomic scale thickness and pristine int... » read more

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