tag: forksheet FETs

Gate-All-Around: TCAD and DTCO Approach To Evaluate Power and Performance (imec, et al.)
By Technical Paper Link - 27 Nov, 2024 - Comments: 0

A new technical paper titled "Exploring GAA-Nanosheet, Forksheet and GAA-Forksheet Architectures: a TCAD-DTCO Study at 90 nm & 120 nm Cell Height" was published by imec, Huawei Technologies and Global TCAD Solutions. Abstract "This study presents a Technology Computer Aided Design (TCAD) and comprehensive Design-Technology Co-Optimization (DTCO) approach to evaluate and enhance power an... » read more

Intel Vs. Samsung Vs. TSMC
By Ed Sperling - 15 Jul, 2024 - Comments: 3

The three leading-edge foundries — Intel, Samsung, and TSMC — have started filling in some key pieces in their roadmaps, adding aggressive delivery dates for future generations of chip technology and setting the stage for significant improvements in performance with faster delivery time for custom designs. Unlike in the past, when a single industry roadmap dictated how to get to the next... » read more

DTCO/STCO Create Path For Faster Yield Ramps
By Laura Peters - 12 Mar, 2024 - Comments: 0

Higher density in planar SoCs and advanced packages, coupled with more complex interactions and dependencies between various components, are permitting systematic defects to escape traditional detection methods. These issues increasingly are not detected until the chips reach high-volume manufacturing, slowing the yield ramp and bumping up costs. To combat these problems, IDMs and systems co... » read more

What Designers Need To Know About GAA
By Brian Bailey - 13 Apr, 2023 - Comments: 3

While only 12 years old, finFETs are reaching the end of the line. They are being supplanted by gate-all-around (GAA), starting at 3nm [1], which is expected to have a significant impact on how chips are designed. GAAs come in two main flavors today — nanosheets and nanowires. There is much confusion about nanosheets, and the difference between nanosheets and nanowires. The industry still ... » read more

Tech Forecast: Fab Processes To Watch Through 2040
By Laura Peters - 16 Mar, 2023 - Comments: 0

The massive proliferation of semiconductors in more markets, and more applications within those markets, is expected to propel the industry to more than $1 trillion by 2030. But over the next 17 years, semiconductors will reach well beyond the numbers, changing the way people work, how they communicate, and how they measure and monitor their health and well-being. Chips will be the enabling ... » read more

What’s Different About Next-Gen Transistors
By Katherine Derbyshire - 20 Oct, 2022 - Comments: 0

After nearly a decade and five major nodes, along with a slew of half-nodes, the semiconductor manufacturing industry will begin transitioning from finFETs to gate-all-around stacked nanosheet transistor architectures at the 3nm technology node. Relative to finFETs, nanosheet transistors deliver more drive current by increasing channel widths in the same circuit footprint. The gate-all-aroun... » read more

Big Changes In Architectures, Transistors, Materials
By Ed Sperling - 18 Aug, 2022 - Comments: 0

Chipmakers are gearing up for fundamental changes in architectures, materials, and basic structures like transistors and interconnects. The net result will be more process steps, increased complexity for each of those steps, and rising costs across the board. At the leading-edge, finFETs will run out of steam somewhere after the 3nm (30 angstrom) node. The three foundries still working at th... » read more

HBM, Nanosheet FETs Drive X-ray Fab Use
By Laura Peters - 08 Mar, 2022 - Comments: 0

Paul Ryan, vice president and general manager of Bruker’s X-ray Business, sat down with Semiconductor Engineering to discuss the movement of x-ray metrology into manufacturing to better control nanosheet film stacks and solder bump quality. SE: Where are you seeing the greatest growth right now, and what are the critical drivers for your technology from the application side? Ryan: One b... » read more

Next-Gen Transistors
By Ed Sperling - 07 Mar, 2022 - Comments: 0

Nanosheets, or more generally, gate-all-around FETs, mark the next big shift in transistor structures at the most advanced nodes. David Fried, vice president of computational products at Lam Research, talks with Semiconductor Engineering about the advantages of using these new transistor types, along with myriad challenges at future nodes, particularly in the area of metrology. » read more

Transistors Reach Tipping Point At 3nm
By Mark LaPedus - 23 Feb, 2022 - Comments: 1

The semiconductor industry is making its first major change in a new transistor type in more than a decade, moving toward a next-generation structure called gate-all-around (GAA) FETs. Although GAA transistors have yet to ship, many industry experts are wondering how long this technology will deliver — and what new architecture will take over from there. Barring major delays, today’s GAA... » read more

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