tag: gallium nitride

A Star Is Born: Gallium Nitride And The Coming Age Of Compound Semiconductors
By Wei Zhao - 07 Feb, 2023 - Comments: 0

Not so long ago, Blu-ray was hailed as a technological advancement in the world of digital video. But in the streaming era, Blu-ray’s luster has faded. However, the technology responsible for the blue laser diode that gave the Blu-ray player its name – gallium nitride (GaN) – is emerging as one of a number of exciting new developments in the semiconductor industry. Today, GaN is used b... » read more

High Voltage Testing Races Ahead
By Karen Heyman - 06 Dec, 2022 - Comments: 1

Voltage requirements are increasing, especially for the EV market. Even devices that might be considered relatively low voltage, such as display drivers, are now pushing past established baselines. While working with high voltages is nothing new — many engineers can recall yellow caution tape in their workplaces — the sheer number and variety of new requirements have made testing at high... » read more

Equipment Suppliers Brace For GaN Market Explosion
By Adele Hars - 18 Aug, 2022 - Comments: 0

A huge GaN market is opening up, driven by consumer devices and the need for greater energy efficiency across many applications. Suppliers are ready, but to fully compete with SiC in high-voltage automotive applications will require further technological developments in power GaN (gallium nitride). Still, the 2020s mark a very high-growth phase for GaN markets. Revenues in the power GaN mark... » read more

GaN 8Gbps High-Speed Relay MMIC For Automated Test Equipment
By Advantest - 09 Aug, 2022 - Comments: 0

An 8 Gbps high-speed relay MMIC for an Automated Test Equipment (ATE) using a gallium nitride is developed and evaluated. Metal-Insulator-Semiconductor structure with a tantalum oxynitride is employed to reduce a leakage current for ATE applications. The fabricated MMIC shows 0.3 nA of the leakage current, 12 GHz of a －3 dB bandwidth, and excellent eye-opening of 8 Gbps signals with a 18-lead... » read more

Power/Performance Bits: June 28
By Jesse Allen - 28 Jun, 2022 - Comments: 0

Making uniform wafers Scientists from the Korea Institute of Machinery & Materials (KIMM) and Nanyang Technological University Singapore (NTU Singapore) propose a technique that combines nanotransfer printing with metal-assisted chemical etching to improve wafer uniformity and increase yield. The researchers used a chemical-free nanotransfer printing technique that transfers gold nanost... » read more

ORNL: Advantages of Using Wide Bandgap Semiconductor Materials For Extreme Temp & Radiation
By Technical Paper Link - 13 Jun, 2022 - Comments: 0

Research paper from ORNL (Oak Ridge National Lab) titled "Wide Bandgap Semiconductors for Extreme Temperature and Radiation Environments." Abstract "With their greater voltage breakdowns, higher current limitations, and faster switching speeds, wide bandgap semiconductors are increasing in market application over the traditionally dominant silicon devices. Silicon carbide semiconductors hav... » read more

A Full-GaN Solution For High Power Density Chargers And Adapters
By Infineon - 13 Apr, 2022 - Comments: 0

Due to continuous demand for high power density, USB-C fast chargers’ switching frequencies need to be increased to reduce the size of the transformers and the filter components. Emerging technologies based on Wide Band Gap (WBG) semiconductor materials enable new approaches to increase power density. At high switching frequencies, GaN HEMTs for synchronous rectifier (SR) switches have the ad... » read more

Improving Machine Learning-Based Modeling of Semiconductor Devices by Data Self-Augmentation
By Technical Paper Link - 24 Mar, 2022 - Comments: 0

Abstract: "In the electronics industry, introducing Machine Learning (ML)-based techniques can enhance Technology Computer-Aided Design (TCAD) methods. However, the performance of ML models is highly dependent on their training datasets. Particularly in the semiconductor industry, given the fact that the fabrication process of semiconductor devices is complicated and expensive, it is of grea... » read more

GaN ICs Wanted for Power, EV Markets
By Katherine Derbyshire - 17 Mar, 2022 - Comments: 0

Circuits built with discrete GaN components may get the job done, but fully integrated GaN circuits remain the ultimate goal because they would offer many of the same advantages as integrated silicon circuits. These benefits include lower cost as the circuit footprint is scaled, and reduced parasitic resistance and capacitance with shorter interconnect runs. In addition, improved device perf... » read more

HBM, Nanosheet FETs Drive X-ray Fab Use
By Laura Peters - 08 Mar, 2022 - Comments: 0

Paul Ryan, vice president and general manager of Bruker’s X-ray Business, sat down with Semiconductor Engineering to discuss the movement of x-ray metrology into manufacturing to better control nanosheet film stacks and solder bump quality. SE: Where are you seeing the greatest growth right now, and what are the critical drivers for your technology from the application side? Ryan: One b... » read more

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